公开(公告)号：US11387308B2

公开(公告)日：2022-07-12

申请号：US16071681

申请日：2017-12-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Zhang ,  Zhijun Lv ,  Wenqu Liu ,  Liwen Dong ,  Shizheng Zhang ,  Ning Dang ,  Zhiyong Liu

IPC: H01L27/32 ,  H01L29/786

Abstract: The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.

公开(公告)号：US20210202648A1

公开(公告)日：2021-07-01

申请号：US16071681

申请日：2017-12-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Zhang ,  Zhijun Lv ,  Wenqu Liu ,  Liwen Dong ,  Shizheng Zhang ,  Ning Dang ,  Zhiyong Liu

IPC: H01L27/32 ,  H01L29/786

Abstract: The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.

公开(公告)号：US09515095B2

公开(公告)日：2016-12-06

申请号：US14422843

申请日：2014-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Zhang ,  Qi Yao ,  Zhiyong Liu

IPC: H01L27/12 ,  H01L21/77 ,  G02F1/1343 ,  H01L29/45

CPC classification number: H01L27/124 ,  G02F1/134336 ,  G02F1/13439 ,  G02F2001/134372 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1259 ,  H01L29/458

Abstract: The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and at least one driving electrode provided on the base substrate, and the thin film transistor includes a gate, and a source and a drain provided in the same layer, wherein the gate, the source or the drain is formed with the same material as the at least one driving electrode, and thickness thereof is larger than that of the at least one driving electrode. Regarding the array substrate, the manufacturing procedure of the array substrate is effectively simplified, cost for mask plate and material is reduced, equipment investment is reduced, production cost is saved, productivity is improved, and competitiveness of the display device is increased, while the transmittance requirement is met.

Abstract translation: 本发明属于显示技术领域，特别是提供阵列基板及其制造方法以及显示装置。 阵列基板包括基底基板和薄膜晶体管以及设置在基底基板上的至少一个驱动电极，薄膜晶体管包括栅极以及设置在同一层中的源极和漏极，其中栅极， 源极或漏极由与至少一个驱动电极相同的材料形成，并且其厚度大于至少一个驱动电极的厚度。 关于阵列基板，阵列基板的制造工序被有效地简化，掩模板和材料的成本降低，设备投资减少，生产成本节省，生产率提高，显示装置的竞争力增加，而 满足透光率要求。

公开(公告)号：US10930788B2

公开(公告)日：2021-02-23

申请号：US16331092

申请日：2018-03-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qi Yao ,  Zhanfeng Cao ,  Feng Zhang ,  Haixu Li ,  Shengguang Ban ,  Zhiyong Liu

IPC: H01L29/04 ,  H01L31/036 ,  H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/417

Abstract: A display panel includes a base substrate, and thin film transistors positioned on the base substrate. Each thin film transistor includes a polysilicon layer. The display panel further includes a light-shielding layer for blocking ultraviolet (UV) light that is located at a side of the polysilicon layer away from the base substrate. An orthographic projection of the polysilicon layer on the substrate is in a range of an orthographic projection of the light-shielding layer on the substrate.

公开(公告)号：US10325929B2

公开(公告)日：2019-06-18

申请号：US15966579

申请日：2018-04-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feng Zhang ,  Zhijun Lv ,  Wenqu Liu ,  Liwen Dong ,  Shizheng Zhang ,  Ning Dang ,  Zhiyong Liu

IPC: H01L25/00 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1339

Abstract: The present disclosure discloses a method for fabricating a display substrate, belonging to the technical field of displaying. The method includes: providing a base substrate having an array of Thin Film Transistors; forming a photoresist pattern on the base substrate, the photoresist pattern including a hollow region for forming a spacer pattern; forming a spacer material in the hollow region; and peeling the photoresist pattern so that the spacer material in the hollow region forms the spacer pattern.