公开(公告)号：US10593735B2

公开(公告)日：2020-03-17

申请号：US16445749

申请日：2019-06-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuai Chang ,  Haizheng Zhong ,  Dengbao Han

IPC: H01L29/40 ,  H01L27/32 ,  H01L51/50 ,  H01L51/42 ,  H05B37/02 ,  H05B33/08 ,  H01L51/56

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

公开(公告)号：US12004418B2

公开(公告)日：2024-06-04

申请号：US17432445

申请日：2021-02-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Haizheng Zhong ,  Dengbao Han ,  Chenhui Wang ,  Shuai Chang ,  Yang Liu ,  Xiang Miao

IPC: H10K85/50 ,  C09K11/06 ,  H10K71/10 ,  H10K50/11

CPC classification number: H10K85/50 ,  C09K11/06 ,  H10K71/10 ,  C09K2211/188 ,  H10K50/11

Abstract: The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.

公开(公告)号：US20200013976A1

公开(公告)日：2020-01-09

申请号：US16504439

申请日：2019-07-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haizheng Zhong ,  Shuai Chang ,  Xiaomei Chen

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h−1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl−, Br− and I−.

公开(公告)号：US11462706B2

公开(公告)日：2022-10-04

申请号：US16617891

申请日：2019-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin Zhang ,  Haizheng Zhong ,  Shuai Chang

IPC: H01L51/50 ,  H01L51/56

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

公开(公告)号：US10971692B2

公开(公告)日：2021-04-06

申请号：US16504439

申请日：2019-07-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Haizheng Zhong ,  Shuai Chang ,  Xiaomei Chen

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L27/32 ,  H01G9/20 ,  H01G9/00 ,  C30B7/00 ,  C30B7/14 ,  C30B29/54

Abstract: The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h-1° C./24 h to generate an A4BX6 single crystal thin film containing ABX3 quantum dots, and using the A4BX6 single crystal thin film containing ABX3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs+, CH3NH3+ and HC(NH2)2+; B includes one of Pb2+ and Sn2+; and X includes one of Cl−, Br− and I−.