公开(公告)号：US10607854B2

公开(公告)日：2020-03-31

申请号：US16322308

申请日：2018-05-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Jianguo Wang ,  Fanna Meng

IPC: H01L21/311 ,  H01L21/3213 ,  H01L29/786

Abstract: Provided in an embodiment of the present invention are a manufacturing method of an electrode pattern, a thin film transistor and a manufacturing method thereof, and a display panel. The manufacturing method of an electrode pattern includes: forming a metal thin film; performing processing on the metal thin film to form a partner layer over a surface of the metal thin film, the partner layer being configured to react with a photoresist to form a hydrogen bond; and performing patterning to form an electrode.

公开(公告)号：US10811510B2

公开(公告)日：2020-10-20

申请号：US16333102

申请日：2018-05-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Haixu Li ,  Zhanfeng Cao ,  Qi Yao ,  Jianguo Wang ,  Fanna Meng

IPC: H01L29/43 ,  H01L29/40 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate, a display panel, and a display device are disclosed. The present disclosure is directed to the field of display technologies. The thin film transistor comprises a drain electrode and a source electrode. At least one of the drain electrode and the source electrode are an yttrium-doped first metal film, and a surface of the first metal film is yttrium-copper complex oxide formed by annealing.