Abstract:
A P+INIPIN+ diode is operated as an avalanche diode to provide highly efficient negative resistance. Also, by connecting voltage sources to the intermediate N- and P-Zones, the devices may be used as an electronic switch.
Abstract:
A diode for use in a TRAPATT oscillator circuit is made in a known manner with care being taken to minimize internal defects. Recombination centers are then introduced into the diode for reducing the diode lifetime to a sufficient value to give a reverse saturation current Is appropriate for TRAPATT mode operation. The recombination centers may be introduced by high energy particle radiation, gold doping or quenching.
Abstract:
THE DIFFUSION OF RELATIVELY MOBILE ACCEPTOR DOPANT ATOMS AWAY FROM THE EPITAXIALLYL-GROWN P-N JUNCTION OF A GALLIUM PHOSPHIDE ELETROLUMINESCENT DEVICE DURING THE EPTIAXIAL GROWTH PROCESS CAUSES THE DEGRADATION OF ELECTROLUMINESCENT EFFICIENCY. THIS DIFFUSION CAN BE PREVENTED BY THE INCLUSION OF THE MOBILE ACCEPTOR DOPANT AS A MINOR DOPANT IN THE N-REGION IN ESSENTIALLY THE SAME CONCENTRATION AS IS PRESENT AS THE MAJOR DOPANT IN THE P-REGION.