THE DIFFUSION OF RELATIVELY MOBILE ACCEPTOR DOPANT ATOMS AWAY FROM THE EPITAXIALLYL-GROWN P-N JUNCTION OF A GALLIUM PHOSPHIDE ELETROLUMINESCENT DEVICE DURING THE EPTIAXIAL GROWTH PROCESS CAUSES THE DEGRADATION OF ELECTROLUMINESCENT EFFICIENCY. THIS DIFFUSION CAN BE PREVENTED BY THE INCLUSION OF THE MOBILE ACCEPTOR DOPANT AS A MINOR DOPANT IN THE N-REGION IN ESSENTIALLY THE SAME CONCENTRATION AS IS PRESENT AS THE MAJOR DOPANT IN THE P-REGION.