公开(公告)号：US3624557A

公开(公告)日：1971-11-30

申请号：US3624557D

申请日：1969-09-02

Applicant: BELL TELEPHONE LABOR INC

Inventor： LOACH BERNARD C DE JR ,  SCHARFETTER DONALD L

IPC: H01L29/00 ,  H03B9/12 ,  H03B7/06

CPC classification number: H01L29/00 ,  H03B9/12

Abstract: A diode for use in a TRAPATT oscillator circuit is made in a known manner with care being taken to minimize internal defects. Recombination centers are then introduced into the diode for reducing the diode lifetime to a sufficient value to give a reverse saturation current Is appropriate for TRAPATT mode operation. The recombination centers may be introduced by high energy particle radiation, gold doping or quenching.

公开(公告)号：US3426295A

公开(公告)日：1969-02-04

申请号：US3426295D

申请日：1966-05-16

Applicant: BELL TELEPHONE LABOR INC

Inventor： LOACH BERNARD C DE JR ,  GUMMEL HERMANN K ,  SCHARFETTER DONALD L

IPC: H01L29/00 ,  H03B9/12 ,  H03B5/12 ,  H03B5/24 ,  H03B7/06

CPC classification number: H01L29/00 ,  H03B9/12

公开(公告)号：US3628187A

公开(公告)日：1971-12-14

申请号：US3628187D

申请日：1969-12-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： LOACH BERNARD C DE JR ,  EDWARDS ROGER

IPC: H01L29/872 ,  H01L21/00 ,  H01L29/47 ,  H01L29/861 ,  H01L29/864 ,  H03B9/12 ,  H03B7/06

CPC classification number: H03B9/12 ,  H01L21/00 ,  H01L29/861

Abstract: A negative resistance avalanche diode comprises only a bulk semiconductor wafer contained between opposite Schottky barrier contacts.

公开(公告)号：US3448415A

公开(公告)日：1969-06-03

申请号：US3448415D

申请日：1968-08-01

Applicant: BELL TELEPHONE LABOR INC

Inventor： LOACH BERNARD C DE JR

IPC: H01L23/66 ,  H03F7/04 ,  H01P1/20

CPC classification number: H03F7/04 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00