Encoding of read only memory by laser vaporization
    1.
    发明授权
    Encoding of read only memory by laser vaporization 失效
    通过激光蒸发编辑只读存储器

    公开(公告)号:US3740523A

    公开(公告)日:1973-06-19

    申请号:US3740523D

    申请日:1971-12-30

    Inventor: COHEN M FULTON A

    Abstract: A beam-lead silicon integrated circuit read-only memory is made in a conventional manner by forming an array of transistors on a silicon substrate, except that the gold portion of one conductive lead to each memory cell is severed, as by gold etching. Conductive connection to each memory cell is, however, maintained by the platinum-titanium intermediate layer that underlays the gold conductor. The array is permanently encoded by selectively vaporizing, with a laser beam, the exposed platinum layer of certain memory cells. This technique permits laser encoding of a beam-lead silicon integrated circuit with a sufficiently low power beam as not to endanger the silicon substrate.

    Abstract translation: 通过在硅衬底上形成晶体管阵列,除了通过金蚀刻将每个存储单元的一个导电引线的金部分切断之外,以常规方式制造光束引线硅集成电路只读存储器。 然而,通过支撑金导体的铂钛中间层来保持与每个存储单元的导电连接。 通过用激光束选择性地蒸发某些存储器单元的暴露的铂层来永久地编码阵列。 该技术允许具有足够低功率光束的光束引线硅集成电路的激光编码,以免危及硅衬底。

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