Semiconductor Laser and Optical Amplifier Photonic Package

    公开(公告)号:US20250035752A1

    公开(公告)日:2025-01-30

    申请号:US18794534

    申请日:2024-08-05

    Abstract: A light detection and ranging (LIDAR) device includes a first wafer layer, a laser assembly disposed on the first wafer layer, a capping layer, a second wafer layer, and a photonic integrated circuit (PIC). The capping layer is coupled to the first wafer layer and configured to seal the laser assembly. The second wafer layer is at least partially coupled to the first wafer layer. The PIC is formed on the second wafer layer. The second wafer includes an exit feature configured to outcouple laser light from the laser assembly.

    LIDAR with Switchable Local Oscillator Signals

    公开(公告)号:US20240219574A1

    公开(公告)日:2024-07-04

    申请号:US18404620

    申请日:2024-01-04

    CPC classification number: G01S17/931 G01S7/484 G01S7/4863

    Abstract: A light detection and ranging (LIDAR) sensor system includes a plurality of LIDAR pixels and a local oscillator module. The local oscillator module is coupled to the plurality of LIDAR pixels. The local oscillator module includes a first local oscillator input configured to receive a first local oscillator signal and a second local oscillator input configured to receive a second local oscillator signal. The local oscillator module is configured to provide the first local oscillator signal or the second local oscillator signal to a first LIDAR pixel of the plurality of LIDAR pixels.

    Silicon Photonics Device for LIDAR Sensor and Method for Fabrication

    公开(公告)号:US20240151820A1

    公开(公告)日:2024-05-09

    申请号:US18412119

    申请日:2024-01-12

    CPC classification number: G01S7/4813 G01S17/931

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    LIDAR sensor system including integrated modulator

    公开(公告)号:US12222447B1

    公开(公告)日:2025-02-11

    申请号:US18516646

    申请日:2023-11-21

    Abstract: A light detection and ranging (LIDAR) system for a vehicle can include: a light source configured to output a beam; a photonics integrated circuit (PIC) including a semiconductor die, the semiconductor die comprising a substrate having two or more semiconductor devices formed on the substrate, the two or more semiconductor devices configured to receive the beam from the light source and modify the beam and at least one photonics die coupled to the semiconductor die, the at least one photonics die comprising at least a transmitter configured to receive the beam from the semiconductor die; and one or more optics configured to receive the beam from the transmitter and emit the beam towards an object in an environment of the vehicle.

    Solid-state light detection and ranging (LIDAR) system with real-time self-calibration

    公开(公告)号:US12210126B2

    公开(公告)日:2025-01-28

    申请号:US17113218

    申请日:2020-12-07

    Inventor: Sen Lin

    Abstract: A light detection and ranging system. The system includes a solid-state optical antenna array, a phase monitor array, a phase controller, a plurality of phase shifters and a global phase shifter. The phase monitor array is configured to output a first mixed signal associated with one of the optical antenna subarrays, and a second mixed signal associated with two of the optical antenna subarrays. The phase controller is configured to output a first phase coefficient based on the first mixed signal and a second phase coefficient based on the second mixed signal. One of the phase shifters is configured to apply the first phase coefficient to compensate for temperature variation within one of the optical antenna subarrays. The global phase shifter is configured to apply the second phase coefficient to compensate for temperature variation between two of the optical antenna subarrays.

    Silicon Photonics Device for LIDAR Sensor and Method for Fabrication

    公开(公告)号:US20230161105A1

    公开(公告)日:2023-05-25

    申请号:US18051337

    申请日:2022-10-31

    CPC classification number: G02B6/136 G01S7/4816 G02B2006/12107

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    Silicon Photonics Device for LIDAR Sensor and Method for Fabrication

    公开(公告)号:US20230161006A1

    公开(公告)日:2023-05-25

    申请号:US17853674

    申请日:2022-06-29

    CPC classification number: G01S7/4813 G01S17/931

    Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

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