公开(公告)号：US20100134182A1

公开(公告)日：2010-06-03

申请号：US12701896

申请日：2010-02-08

Applicant: Ashok Kumar KAPOOR ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kumar KAPOOR ,  Robert Strain ,  Reuven Marko

IPC: G05F3/02 ,  H01L21/8238

CPC classification number: H01L27/0629 ,  H01L27/0727 ,  H01L27/1203 ,  H01L29/78 ,  H03K19/0005 ,  H03K19/0016 ,  H03K19/00361

Abstract: An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.

Abstract translation: 公开了一种用于金属氧化物半导体（MOS）晶体管的装置和制造方法。 根据本发明的装置可在低于2V的电压下工作。 这些器件具有区域有效性，具有改进的驱动强度，并且具有减小的漏电流。 使用包括与电容器并联的正向偏置二极管的动态阈值电压控制方案，而不改变现有的MOS技术过程。 该方案控制每个晶体管的阈值电压。 在OFF状态下，晶体管的阈值电压的大小增加，保持晶体管漏电量最小。 在ON状态下，阈值电压的大小减小，导致驱动强度增加。 本发明在用于体积和绝缘体上硅（SOI）CMOS的MOS技术中特别有用。 还示出了与上述结构一起使用阱的反向偏置以进一步减小MOS晶体管中的泄漏。

公开(公告)号：US08048732B2

公开(公告)日：2011-11-01

申请号：US12701896

申请日：2010-02-08

Applicant: Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

IPC: H01L21/8238

CPC classification number: H01L27/0629 ,  H01L27/0727 ,  H01L27/1203 ,  H01L29/78 ,  H03K19/0005 ,  H03K19/0016 ,  H03K19/00361

Abstract: An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.

Abstract translation: 公开了一种用于金属氧化物半导体（MOS）晶体管的装置和制造方法。 根据本发明的装置可在低于2V的电压下工作。 这些器件具有区域有效性，具有改进的驱动强度，并且具有减小的漏电流。 使用包括与电容器并联的正向偏置二极管的动态阈值电压控制方案，而不改变现有的MOS技术过程。 该方案控制每个晶体管的阈值电压。 在OFF状态下，晶体管的阈值电压的大小增加，保持晶体管漏电量最小。 在ON状态下，阈值电压的大小减小，导致驱动强度增加。 本发明在用于体积和绝缘体上硅（SOI）CMOS的MOS技术中特别有用。 还示出了与上述结构一起使用阱的反向偏置以进一步减小MOS晶体管中的泄漏。

公开(公告)号：US07898297B2

公开(公告)日：2011-03-01

申请号：US11684466

申请日：2007-03-09

Applicant: Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

IPC: H03K19/096

CPC classification number: H03K19/0963 ,  H01L21/823807 ,  H01L27/0727 ,  H01L27/0921

Abstract: Metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, that are area efficient, and that exhibit improved drive strength and leakage current that are disclosed. A dynamic threshold voltage control scheme is used that does not require a change to existing MOS technology processes. Threshold voltage of the transistor is controlled, such that in the Off state, the threshold voltage of the transistor is set high, keeping the transistor leakage to a small value. The advantages provided by apply to dynamic logic, as well as in the specific well separation imposed by design rules because well potential difference are lower than the supply voltage swing.

Abstract translation: 可在低于1.5V的电压下工作的金属氧化物半导体（MOS）晶体管，其面积效率高，并且表现出改进的驱动强度和漏电流。 使用动态阈值电压控制方案，其不需要改变现有的MOS技术过程。 控制晶体管的阈值电压，使得在关断状态下，晶体管的阈值电压被设置为高，从而将晶体管泄漏保持在较小的值。 动态逻辑提供的优点，以及设计规则施加的具体井分离，因为潜在电位差低于电源电压摆幅。

公开(公告)号：US07683433B2

公开(公告)日：2010-03-23

申请号：US11533332

申请日：2006-09-19

Applicant: Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kumar Kapoor ,  Robert Strain ,  Reuven Marko

IPC: H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L27/0629 ,  H01L27/0727 ,  H01L27/1203 ,  H01L29/78 ,  H03K19/0005 ,  H03K19/0016 ,  H03K19/00361

Abstract: An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.

Abstract translation: 公开了一种用于金属氧化物半导体（MOS）晶体管的装置和制造方法。 根据本发明的装置可在低于2V的电压下工作。 这些器件具有区域有效性，具有改进的驱动强度，并且具有减小的漏电流。 使用包括与电容器并联的正向偏置二极管的动态阈值电压控制方案，而不改变现有的MOS技术过程。 该方案控制每个晶体管的阈值电压。 在OFF状态下，晶体管的阈值电压的大小增加，保持晶体管漏电量最小。 在ON状态下，阈值电压的大小减小，导致驱动强度增加。 本发明在用于体积和绝缘体上硅（SOI）CMOS的MOS技术中特别有用。 还示出了与上述结构一起使用阱的反向偏置以进一步减小MOS晶体管中的泄漏。

公开(公告)号：US20070229145A1

公开(公告)日：2007-10-04

申请号：US11684466

申请日：2007-03-09

Applicant: Ashok Kapoor ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kapoor ,  Robert Strain ,  Reuven Marko

IPC: H03K3/01

CPC classification number: H03K19/0963 ,  H01L21/823807 ,  H01L27/0727 ,  H01L27/0921

Abstract: Metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, that are area efficient, and that exhibit improved drive strength and leakage current that are disclosed. A dynamic threshold voltage control scheme is used that does not require a change to existing MOS technology processes. Threshold voltage of the transistor is controlled, such that in the Off state, the threshold voltage of the transistor is set high, keeping the transistor leakage to a small value. The advantages provided by apply to dynamic logic, as well as in the specific well separation imposed by design rules because well potential difference are lower than the supply voltage swing.

Abstract translation: 可在低于1.5V的电压下工作的金属氧化物半导体（MOS）晶体管，其面积效率高，并且表现出改进的驱动强度和漏电流。 使用动态阈值电压控制方案，其不需要改变现有的MOS技术过程。 控制晶体管的阈值电压，使得在关断状态下，晶体管的阈值电压被设置为高，从而将晶体管泄漏保持在较小的值。 动态逻辑提供的优点，以及设计规则施加的具体井分离，因为潜在电位差低于电源电压摆幅。

公开(公告)号：US20070069306A1

公开(公告)日：2007-03-29

申请号：US11533332

申请日：2006-09-19

Applicant: Ashok Kapoor ,  Robert Strain ,  Reuven Marko

Inventor： Ashok Kapoor ,  Robert Strain ,  Reuven Marko

IPC: H01L29/94

CPC classification number: H01L27/0629 ,  H01L27/0727 ,  H01L27/1203 ,  H01L29/78 ,  H03K19/0005 ,  H03K19/0016 ,  H03K19/00361

Abstract: An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.

Abstract translation: 公开了一种用于金属氧化物半导体（MOS）晶体管的装置和制造方法。 根据本发明的装置可在低于2V的电压下工作。 这些器件具有区域有效性，具有改进的驱动强度，并且具有减小的漏电流。 使用包括与电容器并联的正向偏置二极管的动态阈值电压控制方案，而不改变现有的MOS技术过程。 该方案控制每个晶体管的阈值电压。 在OFF状态下，晶体管的阈值电压的大小增加，保持晶体管漏电量最小。 在ON状态下，阈值电压的大小减小，导致驱动强度增加。 本发明在用于体积和绝缘体上硅（SOI）CMOS的MOS技术中特别有用。 还示出了与上述结构一起使用阱的反向偏置以进一步减小MOS晶体管中的泄漏。

公开(公告)号：US08695614B2

公开(公告)日：2014-04-15

申请号：US13888915

申请日：2013-05-07

Applicant: Dan Chaimovski ,  Reuven Marko

Inventor： Dan Chaimovski ,  Reuven Marko

IPC: A45B23/00

CPC classification number: A45B3/00 ,  A45B23/00 ,  A45B25/10 ,  A45B2023/0012 ,  A45B2200/1027 ,  A45B2200/1036 ,  E04H15/14 ,  E04H15/28 ,  E04H15/58 ,  F24F7/007 ,  H02S10/40 ,  H02S20/10 ,  H02S30/20

Abstract: An air cooled sunshade constructed to provide cooling under the canopy of the sunshade. The foldable canopy of the sunshade includes a plurality of segments of elongated panels having embedded solar panels and a plurality of segments of pliable material to allow the canopy to easily stretch when in the open position and collapse in the closed position, typically arranged having one elongated panel connected on foldable material segment arranged around a center piece. In an embodiment disclosed herein, the pliable material is formed as a pipe having an upper layer and a lower layer, the lower layer having pores through which air can flow to the area under the canopy. The air can then flow from a fan or an air conditioner mounted on the center piece and allowing air to flow evenly under the canopy. The solar panels are connected to provide the necessary energy.

Abstract translation: 一个空气冷却的遮阳棚，用于在遮阳篷的下面提供冷却。 遮阳篷的可折叠天篷包括具有嵌入式太阳能电池板和多个柔韧材料段的细长板的多个段，以允许天篷在处于打开位置时容易地拉伸并且在闭合位置中折叠，通常布置成具有一个细长的 面板连接在可折叠材料段上，围绕中心件布置。 在本文公开的实施例中，柔性材料形成为具有上层和下层的管，下层具有空气可以流过冠层下方的区域的孔。 然后，空气可以从安装在中心件上的风扇或空调器流出，并允许空气在罩下均匀地流动。 太阳能电池板连接以提供必要的能量。

公开(公告)号：US5764736A

公开(公告)日：1998-06-09

申请号：US504934

申请日：1995-07-20

Applicant: Yuval Shachar ,  Chaim Bendelac ,  Reuven Marko

Inventor： Yuval Shachar ,  Chaim Bendelac ,  Reuven Marko

IPC: H04L29/06 ,  H04L29/12 ,  H04M1/2745 ,  H04M3/42 ,  H04M3/493 ,  H04M3/51 ,  H04M7/12 ,  H04M11/06 ,  H04Q11/04 ,  H04M11/00

CPC classification number: H04L65/1069 ,  H04L29/06 ,  H04L29/12009 ,  H04L61/00 ,  H04L65/1083 ,  H04M1/27455 ,  H04M11/06 ,  H04M3/4931 ,  H04M3/51 ,  H04M7/003 ,  H04Q11/0435 ,  H04L29/06027 ,  H04M1/274508 ,  H04M3/42323 ,  H04M7/12

Abstract: Techniques are described for switching from a data session to a voice session, then back to the data session. A "primary" data connection is established between a user's terminal and a communications network, which provides the user terminal with a tag identifying a voice network address (typically of a service provider) to which a voice connection can be established. The user initiates a voice connection (session) with the service provider by selecting a displayed service object associated with the service tag. During the voice session, the data session is suspended. Upon completion of the voice session, the "primary" data session is resumed. In an embodiment of the invention, a "secondary" data connection can be established during the voice session using one or more physical network connections. Data communication during the secondary data connection is optionally "remotely" guided by the service provider, and may include a distinct address for resuming the primary data connection. Video connections are accommodated during the voice session.

Abstract translation: 描述了从数据会话切换到语音会话，然后返回到数据会话的技术。 在用户终端和通信网络之间建立“主要”数据连接，该通信网络为用户终端提供标识可建立语音连接的语音网络地址（通常为服务提供商）的标签。 用户通过选择与服务标签相关联的显示的服务对象来启动与服务提供商的语音连接（会话）。 在语音会话期间，数据会话被暂停。 完成语音会话后，恢复“主”数据会话。 在本发明的实施例中，可以在使用一个或多个物理网络连接的语音会话期间建立“次”数据连接。 辅助数据连接期间的数据通信可选地由服务提供商“远程”指导，并且可以包括用于恢复主数据连接的不同地址。 视频连接在语音会话期间被容纳。

公开(公告)号：USD678768S1

公开(公告)日：2013-03-26

申请号：US29394407

申请日：2011-06-16

Applicant: Or Agassi ,  Reuven Marko

Designer： Or Agassi ,  Reuven Marko

公开(公告)号：US5249286A

公开(公告)日：1993-09-28

申请号：US982031

申请日：1992-11-24

Applicant: Donald B. Alpert ,  Oved Oz ,  Gideon Intrater ,  Reuven Marko ,  Alon Shacham

Inventor： Donald B. Alpert ,  Oved Oz ,  Gideon Intrater ,  Reuven Marko ,  Alon Shacham

IPC: G06F12/12

CPC classification number: G06F12/126

Abstract: A microprocessor architecture that includes capabilities for locking individual entries into its integrated instruction cache and data cache while leaving the remainder of the cache unlocked and available for use in capturing the microprocessor's dynamic locality of reference. The microprocessor also includes the capability for locking instruction cache entries without requiring that the instructions be executed during the locking process.

Abstract translation: 一种微处理器架构，其包括将单个条目锁定到其集成指令高速缓存和数据高速缓存中的能力，同时使缓存的其余部分被解锁并可用于捕获微处理器的动态参考位置。 微处理器还包括锁定指令高速缓存条目的能力，而不需要在锁定过程期间执行指令。