公开(公告)号：US20240194605A1

公开(公告)日：2024-06-13

申请号：US18534333

申请日：2023-12-08

Applicant: Applied Materials, Inc.

Inventor： Mohammad Mahdi TAVAKOLI ,  Avgerinos V. GELATOS ,  Jiajie CEN ,  Kevin KASHEFI ,  Joung Joo LEE ,  Zhihui LIU ,  Yang ZHOU ,  Zhiyuan WU ,  Meng-Shan WU

IPC: H01L23/532 ,  H01J37/32 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01J37/32357 ,  H01L21/02068 ,  H01L21/76843 ,  H01L21/76877 ,  H01J2237/335

Abstract: A semiconductor structure includes a first level comprising a metal layer within a first dielectric layer formed on a substrate, a second level formed on the first level, the second level comprising an interconnect within a second dielectric layer and a barrier layer formed around the interconnect, and a metal capping layer disposed at an interface between the metal layer and the interconnect, wherein the metal capping layer comprises tungsten (W) and has a thickness of between 20 Å and 40 Å.