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公开(公告)号:US20180318758A1
公开(公告)日:2018-11-08
申请号:US16030337
申请日:2018-07-09
Applicant: Applied Materials, Inc.
Inventor: Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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公开(公告)号:US20170216767A1
公开(公告)日:2017-08-03
申请号:US15486938
申请日:2017-04-13
Applicant: Applied Materials, Inc.
Inventor: Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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公开(公告)号:US20190022577A9
公开(公告)日:2019-01-24
申请号:US15486938
申请日:2017-04-13
Applicant: Applied Materials, Inc.
Inventor: Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
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公开(公告)号:US20150251133A1
公开(公告)日:2015-09-10
申请号:US14638871
申请日:2015-03-04
Applicant: Applied Materials, Inc.
Inventor: Michael S. COX , Monique MCINTOSH , Colin John DICKINSON , Paul E. FISHER , Yutaka TANAKA , Zheng YUAN
CPC classification number: B01D53/32 , B01D53/54 , B01D53/64 , B01D53/70 , B01D53/76 , B01D2251/00 , B01D2251/10 , B01D2251/102 , B01D2251/104 , B01D2251/108 , B01D2251/20 , B01D2251/202 , B01D2251/204 , B01D2251/2062 , B01D2251/208 , B01D2251/502 , B01D2252/103 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/7025 , B01D2257/93 , B01D2258/0216 , B01D2259/818 , B01J19/088 , B01J2219/0815 , B01J2219/0875 , B01J2219/0894 , H01J37/32091 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01J37/32669 , H01J2237/002 , H01J2237/335 , Y02C20/20 , Y02C20/30
Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.
Abstract translation: 描述了用于从处理室中减少含有污染物的化合物的等离子体消除过程。 等离子体消除过程采用来自诸如沉积室的处理室的气态前级流出物,并使排出物在放置在前级管路中的等离子体室内反应。 血浆将流出物中的化合物解离,将流出物转化为更良性的化合物。 减轻试剂可能有助于减轻化合物。 减排过程可能是挥发或冷凝减排过程。 代表性的挥发减压试剂包括例如CH 4,H 2 O,H 2,NF 3,SF 6,F 2,HCl,HF,Cl 2和HBr。 代表性的减压剂包括例如H 2,H 2 O,O 2,N 2,O 3,CO,CO 2,NH 3,N 2 O,CH 4及其组合。
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