公开(公告)号：US09385219B2

公开(公告)日：2016-07-05

申请号：US14754042

申请日：2015-06-29

Applicant: Applied Materials, Inc.

Inventor： Ellie Y. Yieh ,  Srinivas D. Nemani ,  Ludovic Godet ,  Yin Fan ,  Tristan Ma

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/265 ,  H01L21/223 ,  H01L21/266 ,  C23C16/455

CPC classification number: H01L29/66803 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45536 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/02057 ,  H01L21/0228 ,  H01L21/02296 ,  H01L21/02315 ,  H01L21/02334 ,  H01L21/0262 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/266

Abstract: Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition process for fin field effect transistors (FinFETs) are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes depositing a first material on a substrate having a three-dimensional (3D) structure formed thereon while performing an implantation process to dope a first region of the 3D structure. The first material may be removed and a second material may be deposited on the 3D structure. The second material may selectively grow on a second region of the 3D structure.

Abstract translation: 提供了使用鳍式场效应晶体管（FinFET）的选择性沉积工艺在翅片结构的不同位置形成所需材料的翅片结构的方法。 在一个实施例中，在衬底上形成具有期望材料的结构的方法包括在执行植入工艺以掺杂3D结构的第一区域的同时，在其上形成有三维（3D）结构的衬底上沉积第一材料。 可以去除第一材料并且可以将第二材料沉积在3D结构上。 第二材料可以选择性地在3D结构的第二区域上生长。

公开(公告)号：US09377692B2

公开(公告)日：2016-06-28

申请号：US14301184

申请日：2014-06-10

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Tristan Ma ,  Joseph C. Olson ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  B82Y10/00

CPC classification number: G03F7/38 ,  B82Y10/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/70

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散，防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。