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    Plasma ignition optimization in semiconductor processing chambers
    1.
    发明授权
    Plasma ignition optimization in semiconductor processing chambers 有权

    公开(公告)号：US11894217B2

    公开(公告)日：2024-02-06

    申请号：US18112207

    申请日：2023-02-21

    Applicant: Applied Materials, Inc.

    Inventor： Soonwook Jung ,  Kenneth D. Schatz

    IPC: H01J37/32 ,  H01L21/311

    CPC classification number: H01J37/32082 ,  H01J37/32926 ,  H01L21/31116 ,  H01J2237/334

    Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

    PLASMA IGNITION OPTIMIZATION IN SEMICONDUCTOR PROCESSING CHAMBERS
    2.
    发明公开
    PLASMA IGNITION OPTIMIZATION IN SEMICONDUCTOR PROCESSING CHAMBERS 审中-公开

    公开(公告)号：US20230197405A1

    公开(公告)日：2023-06-22

    申请号：US18112207

    申请日：2023-02-21

    Applicant: Applied Materials, Inc.

    Inventor： Soonwook Jung ,  Kenneth D. Schatz

    IPC: H01J37/32 ,  H01L21/311

    CPC classification number: H01J37/32082 ,  H01J37/32926 ,  H01L21/31116 ,  H01J2237/334

    Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT
    3.
    发明申请
    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT 审中-公开

    公开(公告)号：US20190272999A1

    公开(公告)日：2019-09-05

    申请号：US15909812

    申请日：2018-03-01

    Applicant: Applied Materials, Inc.

    Inventor： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

    Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

    OPTICAL EMISSION SPECTROSCOPIC TECHNIQUES FOR MONITORING ETCHING
    6.
    发明申请
    OPTICAL EMISSION SPECTROSCOPIC TECHNIQUES FOR MONITORING ETCHING 审中-公开

    公开(公告)号：US20190019734A1

    公开(公告)日：2019-01-17

    申请号：US15646845

    申请日：2017-07-11

    Applicant: Applied Materials, Inc.

    Inventor： Soonwook Jung ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67 ,  G01N21/31 ,  G01N21/67

    Abstract: Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.

    PLASMA POWER TOOL MATCHING USING DC VOLTAGE FEEDBACK
    7.
    发明申请
    PLASMA POWER TOOL MATCHING USING DC VOLTAGE FEEDBACK 审中-公开

    公开(公告)号：US20180366300A1

    公开(公告)日：2018-12-20

    申请号：US15625418

    申请日：2017-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Soonwook Jung ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66 ,  C23C16/503 ,  C23C16/505

    Abstract: Methods of matching process performance across tools are described. In embodiments, the methods include measuring the DC component of voltage across a plasma configured to process a semiconductor substrate. The RF plasma power is adjusted in response to the measurement of the DC component in a feedback loop to achieve a desired DC voltage. The DC voltage is correlated herein with process characteristics. Feeding back the DC voltage to adjust the RF plasma power has been found to achieve similar process characteristics (e.g. etch rates) despite artificially-introduced variations in plasma hardware which simulated worst-case manufacturing variations. More intuitive feedback options, such as AC voltage amplitude were found to correlate poorly with plasma process characteristics.

    ADJUSTABLE REMOTE DISSOCIATION
    9.
    发明申请
    ADJUSTABLE REMOTE DISSOCIATION 有权
    可调远程解散

    公开(公告)号：US20170011931A1

    公开(公告)日：2017-01-12

    申请号：US14793508

    申请日：2015-07-07

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Kenneth D. Schatz ,  Soonwook Jung ,  Dmitry Lubomirsky

    IPC: H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069

    Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.

    Abstract translation: 描述了相对于第二暴露部分选择性地蚀刻图案化衬底的暴露部分的方法。 蚀刻工艺是气相蚀刻，其在与来自惰性前体的远程等离子体中形成的等离子体流出物组合之前，使用在任何等离子体中未激发的氧化前体。 等离子体流出物可以在无等离子体的远程室区域和/或无等离子体的衬底处理区域中与氧化前体组合。 等离子体流出物的组合激发氧化前体并从图案化衬底的暴露部分去除材料。 蚀刻速率可以通过调节氧化前驱体的流量或者非激发/等离子体激发的流量比来控制和选择。

    SEMICONDUCTOR PROCESSING CHAMBER ADAPTER
    10.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBER ADAPTER 有权

    公开(公告)号：US20230005765A1

    公开(公告)日：2023-01-05

    申请号：US17366761

    申请日：2021-07-02

    Applicant: Applied Materials, Inc.

    Inventor： Son T. Nguyen ,  Kenneth D. Schatz ,  Anh N. Nguyen ,  Soonwook Jung ,  Ryan Pakulski ,  Anchuan Wang ,  Zihui Li

    IPC: H01L21/67 ,  H01J37/32

    Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

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