公开(公告)号：US20240105485A1

公开(公告)日：2024-03-28

申请号：US18299119

申请日：2023-04-12

Applicant: Applied Materials, Inc.

Inventor： Ribhu GAUTAM ,  Shu-Kwan LAU ,  Masato ISHII ,  Miao-Chun CHEN ,  Kuan Chien SHEN

IPC: H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67748 ,  H01L21/68707

Abstract: A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

公开(公告)号：US20230212742A1

公开(公告)日：2023-07-06

申请号：US17568404

申请日：2022-01-04

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Vishwas Kumar PANDEY ,  Lori D. WASHINGTON ,  Miao-Chun CHEN

IPC: C23C16/24 ,  C23C16/52

CPC classification number: C23C16/24 ,  C23C16/52

Abstract: Embodiments herein provide for a method of processing a semiconductor substrate. The method described herein may include receiving a first input corresponding to a first geometric hardware configuration of a process chamber, receiving a second input corresponding to a first process recipe of the process chamber, determining, based on the first input and the second input, a first purge gas flow rate for the process chamber, measuring a deposition characteristic of the process chamber via a first sensor, determining, based on the first input, the second input, and the measured deposition characteristic, a second purge gas flow rate, the second purge gas flow rate different from the first purge gas flow rate, and flowing a purge gas at the second purge gas flow rate during a deposition process.