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公开(公告)号：US11429026B2
公开(公告)日：2022-08-30
申请号：US16825393
申请日：2020-03-20
IPC分类号： G03F7/20 , H01L21/027 , G03F7/16 , G03F7/38 , G03F7/30
摘要： A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.
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公开(公告)号：US11609505B2
公开(公告)日：2023-03-21
申请号：US17222696
申请日：2021-04-05
发明人： Mangesh Ashok Bangar , Gautam Pisharody , Lancelot Huang , Alan L. Tso , Douglas A. Buchberger, Jr. , Huixiong Dai , Dmitry Lubomirsky , Srinivas D. Nemani , Christopher Siu Wing Ngai
摘要： Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.
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公开(公告)号：US11880137B2
公开(公告)日：2024-01-23
申请号：US18188676
申请日：2023-03-23
发明人： Huixiong Dai , Mangesh Ashok Bangar , Srinivas D. Nemani , Ellie Y. Yieh , Steven Hiloong Welch , Christopher S. Ngai
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/11 , G03F7/168 , G03F7/203 , G03F7/2022 , G03F7/164 , G03F7/40
摘要： Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.
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公开(公告)号：US12085858B2
公开(公告)日：2024-09-10
申请号：US16825388
申请日：2020-03-20
发明人： Huixiong Dai , Srinivas D. Nemani , Steven Hiloong Welch , Mangesh Ashok Bangar , Ellie Y. Yieh
IPC分类号： G03F7/20 , G03F7/16 , G03F7/38 , H01L21/027 , H01L21/266 , H01L21/311
CPC分类号： G03F7/20 , G03F7/16 , G03F7/38 , H01L21/0273 , H01L21/266 , H01L21/31133
摘要： A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.
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公开(公告)号：US11914299B2
公开(公告)日：2024-02-27
申请号：US17898216
申请日：2022-08-29
IPC分类号： G03F7/20 , H01L21/027 , G03F7/30 , G03F7/38 , G03F7/16
CPC分类号： G03F7/20 , G03F7/16 , G03F7/30 , G03F7/38 , H01L21/0274
摘要： A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.
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公开(公告)号：US20210294216A1
公开(公告)日：2021-09-23
申请号：US16825393
申请日：2020-03-20
IPC分类号： G03F7/20 , H01L21/027 , G03F7/16 , G03F7/38 , G03F7/30
摘要： A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.
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