公开(公告)号：US20250075309A1

公开(公告)日：2025-03-06

申请号：US18799515

申请日：2024-08-09

Applicant: Applied Materials, Inc.

Inventor： Jianxin LEI ,  Kirankumar Neelasandra SAVANDAIAH ,  Andrew MOE ,  Madan Kumar SHIMOGA MYLARAPPA

IPC: C23C14/34

Abstract: The disclosure relates to a target for physical vapor deposition processes. In one embodiment, a physical vapor deposition (PVD) target, includes a monolithic target with a support region partially defined by a process face and radial sidewalls; and a recess within a mounting face of the monolithic target, the recess disposed opposite the process face and extending radially outward of the radial sidewalls.

公开(公告)号：US20240068086A1

公开(公告)日：2024-02-29

申请号：US18074363

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Kirankumar Neelasandra SAVANDAIAH ,  Junqi WEI ,  Bridger Earl HOERNER ,  Kelvin Tai Ming BOH ,  Madan Kumar SHIMOGA MYLARAPPA

IPC: C23C14/34

CPC classification number: C23C14/3414

Abstract: Target assemblies for PVD chambers are provided herein. In some embodiments, a target assembly for a PVD chamber includes: a backing plate; and a target coupled to the backing plate and having a substrate facing surface opposite the backing plate, wherein a peripheral portion of the target includes an angled surface extending radially outward and toward the backing plate, wherein an annular portion of the angled surface has a surface roughness greater than a surface roughness of a remainder of the substrate facing surface of the target.