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公开(公告)号：US20250075309A1
公开(公告)日：2025-03-06
申请号：US18799515
申请日：2024-08-09
Applicant: Applied Materials, Inc.
Inventor： Jianxin LEI , Kirankumar Neelasandra SAVANDAIAH , Andrew MOE , Madan Kumar SHIMOGA MYLARAPPA
IPC: C23C14/34
Abstract: The disclosure relates to a target for physical vapor deposition processes. In one embodiment, a physical vapor deposition (PVD) target, includes a monolithic target with a support region partially defined by a process face and radial sidewalls; and a recess within a mounting face of the monolithic target, the recess disposed opposite the process face and extending radially outward of the radial sidewalls.
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