公开(公告)号：US20220076945A1

公开(公告)日：2022-03-10

申请号：US17014039

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Kwangduk D. Lee

IPC: H01L21/02 ,  H01L27/11556 ,  C23C16/26

Abstract: Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.

公开(公告)号：US20240363332A1

公开(公告)日：2024-10-31

申请号：US18768570

申请日：2024-07-10

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Kwangduk D. Lee

IPC: H01L21/02 ,  C23C16/26 ,  H10B41/27

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/0228 ,  H10B41/27

Abstract: Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.

公开(公告)号：US12062536B2

公开(公告)日：2024-08-13

申请号：US17014039

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Kwangduk D. Lee

IPC: H01L21/02 ,  C23C16/26 ,  H10B41/27

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/0228 ,  H10B41/27

Abstract: Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.