公开(公告)号：US09938622B2

公开(公告)日：2018-04-10

申请号：US15045667

申请日：2016-02-17

Applicant: Applied Materials, Inc.

Inventor： Tae Hong Ha ,  Sang Ho Yu ,  Kiejin Park

IPC: C23C16/06 ,  C23C16/50 ,  C23C16/46 ,  C23C16/505 ,  C23C16/02 ,  C23C16/16 ,  C23C16/18 ,  C23C28/00 ,  H01L21/285 ,  H01L21/768 ,  C23C16/513

CPC classification number: C23C16/46 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/18 ,  C23C16/505 ,  C23C16/513 ,  C23C28/322 ,  C23C28/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

公开(公告)号：US20140106083A1

公开(公告)日：2014-04-17

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： KAI WU ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US09169556B2

公开(公告)日：2015-10-27

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/08 ,  C23C16/14 ,  C23C16/50 ,  C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US08900999B1

公开(公告)日：2014-12-02

申请号：US14036157

申请日：2013-09-25

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang-Hyeob Lee ,  Joshua Collins ,  Kiejin Park

IPC: H01L21/44 ,  H01L21/02

CPC classification number: H01L21/28079 ,  H01L21/76882 ,  H01L21/76883

Abstract: A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

Abstract translation: 提出了一种在不形成接缝的情况下用钨填充衬底中的特征的方法。 通过使用氢（H 2）和六氟化钨（WF 6）前体气体的热化学气相沉积（CVD）工艺来沉积钨。 H2至WF6流量比大于40至1，例如40至1至100至1.沉积过程中的基板温度低于300摄氏度（℃），沉积过程中的处理压力大于 300乇

公开(公告)号：US20140134351A1

公开(公告)日：2014-05-15

申请号：US13968197

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Tae Hong Ha ,  Sang Ho Yu ,  Kiejin Park

IPC: C23C16/505

CPC classification number: C23C16/46 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/18 ,  C23C16/505 ,  C23C16/513 ,  C23C28/322 ,  C23C28/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

Abstract translation: 本文描述了通过PECVD工艺沉积钌的方法。 用于沉积钌的方法可以包括将衬底定位在处理室中，所述衬底具有形成在其上的阻挡层，将衬底加热并保持在第一温度，使第一沉积气体流入处理室，第一沉积气体包括钌 从所述第一沉积气体产生等离子体以在所述阻挡层上沉积第一钌层，将第二沉积气体流入所述处理室以在所述第一钌层上沉积第二钌层，所述第二沉积气体包含钌 在第二钌层上沉积铜籽晶层并在第二温度下退火衬底。