公开(公告)号：US09418867B2

公开(公告)日：2016-08-16

申请号：US14152982

申请日：2014-01-10

Applicant: Applied Materials, Inc.

Inventor： Byungkook Kong ,  Hung Sang Kim ,  Hoon Sang Lee ,  Jeong Hyun Yoo ,  Jun-Wan Kim

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/30

CPC classification number: H01L21/31144 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3003 ,  H01L21/3086 ,  H01L21/31122 ,  H01L21/32139

Abstract: A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is deposited on a first mask layer on a second mask layer over a substrate using the hydrogen plasma particles.

Abstract translation: 包含氢的气体被供应到等离子体源。 从气体产生包含氢等离子体颗粒的等离子体。 使用氢等离子体颗粒，在衬底上的第二掩模层上的第一掩模层上沉积钝化层。

公开(公告)号：US09627216B2

公开(公告)日：2017-04-18

申请号：US14506208

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Byungkook Kong ,  Hoon Sang Lee ,  Jinsu Kim ,  Ho Jeong Kim ,  Xiaosong Ji ,  Hun Sang Kim ,  Jinhan Choi

IPC: H01L21/3065 ,  H01L21/762 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/30655 ,  H01L21/67253 ,  H01L21/76224

Abstract: Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided.

公开(公告)号：US09390923B2

公开(公告)日：2016-07-12

申请号：US14324000

申请日：2014-07-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeong Hyun Yoo ,  Hoon Sang Lee ,  Byungkook Kong

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/32

CPC classification number: H01L21/0338 ,  H01L21/0206 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32

Abstract: Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4).

Abstract translation: 本文提供了用于去除在硼掺杂的非晶碳层的蚀刻期间形成的残余聚合物的方法。 在一些实施例中，蚀刻衬底中的特征的方法包括：通过图案化掩模层将布置在衬底上的掺杂硼的非晶碳层暴露于第一等离子体，以将特征蚀刻到硼掺杂的无定形碳层中，其中第一 等离子体由与硼掺杂的无定形碳层反应形成邻近特征底部的残余聚合物的第一工艺气体形成; 并且通过所述图案化掩模层将残余聚合物暴露于第二等离子体以蚀刻靠近所述特征底部的残余聚合物，其中所述第二等离子体由包含氮（N 2），氧（O 2），氢（ H2）和甲烷（CH4）。

公开(公告)号：US20150200109A1

公开(公告)日：2015-07-16

申请号：US14152982

申请日：2014-01-10

Applicant: Applied Materials, Inc.

Inventor： Byungkook Kong ,  Hung Sang Kim ,  Hoon Sang Lee ,  Jeong Hyun Yoo ,  Jun-Wan Kim

IPC: H01L21/311 ,  C23C16/50 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3003 ,  H01L21/3086 ,  H01L21/31122 ,  H01L21/32139

Abstract: A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is deposited on a first mask layer on a second mask layer over a substrate using the hydrogen plasma particles.

Abstract translation: 包含氢的气体被供应到等离子体源。 从气体产生包含氢等离子体颗粒的等离子体。 使用氢等离子体颗粒，在衬底上的第二掩模层上的第一掩模层上沉积钝化层。

公开(公告)号：US09064812B2

公开(公告)日：2015-06-23

申请号：US14072430

申请日：2013-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Jinsu Kim ,  Xiaosong Ji ,  Jinhan Choi ,  Ho Jeong Kim ,  Byungkook Kong ,  Hoon Sang Lee

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J2237/3347 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/76224

Abstract: Embodiments of methods for etching a substrate include exposing the substrate to a first plasma formed from an inert gas; exposing the substrate to a second plasma formed from an oxygen-containing gas to form an oxide layer on a bottom and sides of a low aspect ratio feature and a high aspect ratio feature, wherein the oxide layer on the bottom of the low aspect ratio feature is thicker than on the bottom of the high aspect ratio feature; etching the oxide layer from the bottom of the low and high aspect ratio features with a third plasma to expose the bottom of the high aspect ratio feature while the bottom of the low aspect ratio feature remains covered; and exposing the substrate to a fourth plasma formed from a halogen-containing gas to etch the bottom of the low aspect ratio feature and the high aspect ratio feature.

Abstract translation: 用于蚀刻衬底的方法的实施例包括将衬底暴露于由惰性气体形成的第一等离子体; 将衬底暴露于由含氧气体形成的第二等离子体以在低纵横比特征和高纵横比特征的底部和侧面上形成氧化物层，其中低纵横比特征的底部上的氧化物层 比高宽比特征的底部厚; 使用第三等离子体从低和高纵横比特征的底部蚀刻氧化物层，以暴露高纵横比特征的底部，而低纵横比特征的底部保持覆盖; 并将衬底暴露于由含卤素气体形成的第四等离子体，以蚀刻低纵横比特征和高纵横比特征的底部。