公开(公告)号：US09831074B2

公开(公告)日：2017-11-28

申请号：US14062627

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Joung Joo Lee ,  Guojun Liu ,  Wei W. Wang ,  Prashanth Kothnur

IPC: H01J37/34 ,  C23C14/22 ,  C23C14/04 ,  C23C14/34

CPC classification number: H01J37/3447 ,  C23C14/042 ,  C23C14/22 ,  C23C14/3471 ,  H01J37/3426

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

公开(公告)号：US09953813B2

公开(公告)日：2018-04-24

申请号：US14707825

申请日：2015-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Xianmin Tang ,  Joung Joo Lee ,  Guojun Liu

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3447 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J2237/3322 ,  H01L21/02104

Abstract: Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.

公开(公告)号：US09466524B2

公开(公告)日：2016-10-11

申请号：US13742596

申请日：2013-01-16

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

IPC: H01L21/44 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

Abstract: Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

Abstract translation: 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。