公开(公告)号：US20250076216A1

公开(公告)日：2025-03-06

申请号：US18799653

申请日：2024-08-09

Applicant: Applied Materials, Inc.

Inventor： Venkatakaushik VOLETI ,  Yun-Ching CHANG ,  Dan XIE ,  Gregory KIRK ,  Mehdi VAEZ-IRAVANI

IPC: G01N21/95 ,  G01N21/47 ,  H01L21/66 ,  H01L23/00

Abstract: An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having at least parts with a two dimensional (2D) periodic pattern which may include defects, an optical head including optics, a dark-field illuminator configured to illuminate the surface of the sample at an first angle, wherein the first angle is an oblique angle, a bright-field illuminator configured to illuminate the surface at a second angle, a dark-field collection path, a bright-field collection path, and a sensor configured to detect light transmitted from the dark-field illuminator, scattered at the surface of the sample, collected by the optical head, and relayed through the dark-field collection path, and light transmitted from the bright-field illuminator, reflected at the surface of the sample, and relayed through the bright-field collection path.

公开(公告)号：US20190072497A1

公开(公告)日：2019-03-07

申请号：US16080075

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Todd EGAN ,  Mehdi VAEZ-IRAVANI ,  Samer BANNA ,  Kyle TANTIWONG ,  Gregory KIRK ,  Abraham RAVID ,  Yaoming SHEN

IPC: G01N21/95 ,  H01L21/67 ,  G01N15/02 ,  G01N21/94 ,  G01N15/14

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

公开(公告)号：US20210018449A1

公开(公告)日：2021-01-21

申请号：US17062231

申请日：2020-10-02

Applicant: Applied Materials, Inc.

Inventor： Todd EGAN ,  Mehdi VAEZ-IRAVANI ,  Samer BANNA ,  Kyle TANTIWONG ,  Gregory KIRK ,  Abraham RAVID ,  Yaoming SHEN

IPC: G01N21/95 ,  H01L21/67 ,  G01N15/02 ,  G01N15/14 ,  G01N21/94

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

公开(公告)号：US20170271181A1

公开(公告)日：2017-09-21

申请号：US15584767

申请日：2017-05-02

Applicant: Applied Materials, Inc.

Inventor： Gary E. DICKERSON ,  Seng (victor) Keong LIM ,  Samer BANNA ,  Gregory KIRK ,  Mehdi VAEZ-IRAVANI

IPC: H01L21/67 ,  H01L21/324

CPC classification number: H01L21/67248 ,  H01L21/0273 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/6831 ,  H01L22/12

Abstract: Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g.,

公开(公告)号：US20160276227A1

公开(公告)日：2016-09-22

申请号：US15075094

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Gary E. DICKERSON ,  Seng (victor) Keong LIM ,  Samer BANNA ,  Gregory KIRK ,  Mehdi VAEZ-IRAVANI

IPC: H01L21/66 ,  H01L21/683 ,  H01L21/67 ,  H01L21/324 ,  H01L21/027

CPC classification number: H01L21/67248 ,  H01L21/0273 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/6831 ,  H01L22/12

Abstract: Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g.,

Abstract translation: 本公开的实施例涉及一种用于在通过控制周围环境的IC形成处理序列期间发现的一个或多个操作期间减少将集成电路（IC）装置的部分暴露于各种形式的辐射的不良影响的装置和方法 以及在IC形成处理序列的一个或多个部分期间的IC器件的温度。 提供的能量可以包括在沉积，蚀刻，检查或后处理过程操作期间将辐射传送到形成的或部分形成的IC器件的表面。 在本公开的一些实施例中，将IC器件形成的衬底的温度控制在IC形成处理序列的一个或多个部分期间低于室温（例如，<20℃）的温度 。