公开(公告)号：US20190252161A1

公开(公告)日：2019-08-15

申请号：US15898133

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Shinobu ABE ,  Keita KUWAHARA ,  Chang Hee SHIN ,  Su Ho CHO

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32669 ,  C23C16/509 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

公开(公告)号：US20190249306A1

公开(公告)日：2019-08-15

申请号：US16259285

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Chang Hee SHIN

IPC: C23C16/54 ,  C23C16/44 ,  H01L31/18 ,  H01L31/0384

CPC classification number: C23C16/54 ,  C23C16/4404 ,  H01L31/0384 ,  H01L31/075 ,  H01L31/18

Abstract: Apparatus and methods are provided for reducing cross-contamination between deposition operations during the fabrication of heterojunction cells. An apparatus includes the substrate carrier including a plurality of pockets, and the carrier mask defining the openings that are sized and positioned in correspondence to the pockets of the substrate carrier. The substrate carrier carries a plurality of substrates into an i-layer deposition chamber and a p-layer deposition chamber. The substrate carrier is masked by the carrier mask during deposition of a p-layer. In-situ film mask layer can be used with or without the carrier mask. The in-situ film mask layer is formed of SiN or SiNO and can be deposited over the p-layer. The p-layer is a p-type nanocrystalline SiOx layer formed from a combination of SiH4, B2H6, H2 or CO2. A single substrate carrier can be repeatedly used for sequential deposition of an i-layer and a p-layer without cross contamination.

公开(公告)号：US20230260811A1

公开(公告)日：2023-08-17

申请号：US18024318

申请日：2021-08-18

Applicant: Applied Materials, Inc.

Inventor： Shinobu ABE ,  Chang Hee SHIN ,  Shinichi KURITA ,  Masahiko KOWAKA

IPC: H01L21/673 ,  H01L31/18

CPC classification number: H01L21/6734 ,  H01L31/1876

Abstract: An assembled grid tray is disclosed, comprising a frame for holding multiple substrate trays to form a larger tray for use in a semiconductor processing tool. The frame may be comprised of two outer frame members that hold one or more of the trays, each with a magnet rail use with a maglev system. The frame may be further comprised of an inner frame member positioned between the outer frame members, which may also include a magnet rail, with the frame members being held in position by one or more outer beam members. The frame members may be fabricated of a material having a similar thermal expansion to trays to be placed in the frame.