ULTRAVIOLET AND OZONE CLEAN SYSTEM
    1.
    发明公开

    公开(公告)号:US20240014028A1

    公开(公告)日:2024-01-11

    申请号:US18370481

    申请日:2023-09-20

    CPC classification number: B08B3/10 B08B3/041 B08B13/00 B08B2203/005

    Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

    METHODS AND APPARATUS FOR PHOTOMASK PROCESSING

    公开(公告)号:US20220326607A1

    公开(公告)日:2022-10-13

    申请号:US17228451

    申请日:2021-04-12

    Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

    ADHESIVE MATERIAL REMOVAL FROM PHOTOMASK IN ULTRAVIOLET LITHOGRAPHY APPLICATION

    公开(公告)号:US20210185793A1

    公开(公告)日:2021-06-17

    申请号:US16714247

    申请日:2019-12-13

    Abstract: Embodiments of the present disclosure generally provide apparatus and methods for removing an adhesive material from a photomask. In one embodiment, an apparatus for processing a photomask includes an enclosure, a substrate support assembly disposed in the enclosure, and a dielectric barrier discharge (DBD) plasma generator disposed above the substrate support assembly, wherein the dielectric barrier discharge plasma generator further comprises a first electrode, a second electrode, wherein the first and the second electrodes are vertically aligned and in parallel, a dielectric barrier positioned between the first electrode and the second electrode, and a discharge space defined between the dielectric barrier and the second electrode.

    PELLICLE ADHESIVE RESIDUE REMOVAL SYSTEM AND METHODS

    公开(公告)号:US20200033740A1

    公开(公告)日:2020-01-30

    申请号:US16448722

    申请日:2019-06-21

    Inventor: Banqiu WU Eli DAGAN

    Abstract: Embodiments of the present disclosure generally include apparatus and methods for removing adhesive residues from a surface of a lithography mask. In particular, the processing systems described herein provide for the delivery of a solvent to a discrete plurality of locations on the surface of the lithography mask to facilitate the removal of adhesive residue therefrom. In one embodiment, a method of processing a substrate includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50° C. and about 150° C., flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.

    ATOMIC OXYGEN AND OZONE CLEANING DEVICE HAVING A TEMPERATURE CONTROL APPARATUS

    公开(公告)号:US20240226358A1

    公开(公告)日:2024-07-11

    申请号:US18612006

    申请日:2024-03-21

    Inventor: Banqiu WU Eli DAGAN

    CPC classification number: A61L2/202 A61L2/10 A61L2202/11 A61L2202/122

    Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.

    METHOD FOR REMOVING PHOTORESIST FROM PHOTOMASK SUBSTRATE

    公开(公告)号:US20200328128A1

    公开(公告)日:2020-10-15

    申请号:US16453773

    申请日:2019-06-26

    Abstract: Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.

    PORTION OF LAYER REMOVAL AT SUBSTRATE EDGE
    9.
    发明申请

    公开(公告)号:US20200096860A1

    公开(公告)日:2020-03-26

    申请号:US16557466

    申请日:2019-08-30

    Inventor: Banqiu WU Eli DAGAN

    Abstract: Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.

    APPARATUS AND METHODS FOR FABRICATING A PHOTOMASK SUBSTRATE FOR EUV APPLICATIONS
    10.
    发明申请
    APPARATUS AND METHODS FOR FABRICATING A PHOTOMASK SUBSTRATE FOR EUV APPLICATIONS 有权
    用于制造用于EUV应用的光电子基板的装置和方法

    公开(公告)号:US20140255830A1

    公开(公告)日:2014-09-11

    申请号:US14199575

    申请日:2014-03-06

    CPC classification number: G03F1/80 G03F1/22

    Abstract: An apparatus and methods utilized a DC or AC power to supply through a conductive substrate support pedestal to a conductive photomask substrate during a photomask substrate manufacturing process for EUV or other advanced lithography applications are provided. In one embodiment, an apparatus for processing a photomask includes a substrate support pedestal configured to receive a conductive photomask, wherein the conductive photomask is fabricated from a dielectric material substrate with a conductive coating, and at least a conductive path formed in the substrate support pedestal in contact with the photomask substrate configured to be conductive.

    Abstract translation: 提供了一种在用于EUV或其它先进光刻应用的光掩模衬底制造过程中利用DC或AC电力通过导电衬底支撑基座提供给导电光掩模衬底的装置和方法。 在一个实施例中,一种用于处理光掩模的设备包括被配置为接收导电光掩模的基板支撑基座,其中导电光掩模由具有导电涂层的介电材料基板制成,并且至少形成在基板支撑基座中的导电路径 与配置为导电的光掩模基板接触。

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