公开(公告)号：US20190096634A1

公开(公告)日：2019-03-28

申请号：US16203342

申请日：2018-11-28

Applicant: Applied Materials, Inc.

Inventor： Saravjeet SINGH ,  Graeme Jamieson SCOTT ,  Amitabh SABHARWAL ,  Ajay KUMAR

IPC: H01J37/32

Abstract: Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

公开(公告)号：US20160329210A1

公开(公告)日：2016-11-10

申请号：US15216951

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhigang MAO ,  Xiaoyi CHEN ,  Amitabh SABHARWAL ,  Ajay KUMAR

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  C23F4/00 ,  G03F1/00 ,  G03F1/24 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract translation: 本发明的实施例提供了在EUV应用和相移和二进制光掩模应用中蚀刻设置在膜堆叠中用于制造光掩模的掩模层（例如吸收层）的方法。 在一个实施例中，蚀刻设置在光掩模上的吸收层的方法包括将膜堆叠转移到蚀刻室中，所述膜堆叠具有通过图案化的光致抗蚀剂层部分暴露的含铬层，提供包括Cl 2，O 2的蚀刻气体混合物 和至少一种烃气体输送到处理室中，其中Cl 2和O 2以大于约9的Cl 2：O 2比供应，提供RF源功率以从蚀刻气体混合物形成等离子体，并且蚀刻含铬 在等离子体存在下穿过图案化的光致抗蚀剂层。

公开(公告)号：US20150364347A1

公开(公告)日：2015-12-17

申请号：US14730192

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Khiem NGUYEN ,  Saravjeet SINGH ,  Amitabh SABHARWAL

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/68742 ,  C23C16/458 ,  H01J37/32715 ,  H01J37/32788

Abstract: The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

Abstract translation: 本公开提供了一种基板支撑组件，其包括具有用于接收和支撑基板的上表面的基板支座，设置在基板支撑基座上的盖板和可移动地设置穿过基板支撑基座的盖板和盖板 。 盖板包括具有中心开口的盘体。 两个或更多个升降针是自支撑的。 两个或更多个提升销中的每一个包括一个或多个接触垫，并且提升销的接触垫延伸到盖板的中心开口中，以在衬底的边缘区域处接收和支撑衬底。

公开(公告)号：US20140273490A1

公开(公告)日：2014-09-18

申请号：US14198568

申请日：2014-03-05

Applicant: Applied Materials, Inc.

Inventor： Zhigang MAO ,  Xiaoyi CHEN ,  Amitabh SABHARWAL ,  Ajay KUMAR

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  C23F4/00 ,  G03F1/00 ,  G03F1/24 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract translation: 本发明的实施例提供了在EUV应用和相移和二进制光掩模应用中蚀刻设置在膜堆叠中用于制造光掩模的掩模层（例如吸收层）的方法。 在一个实施例中，蚀刻设置在光掩模上的吸收层的方法包括将膜堆叠转移到蚀刻室中，所述膜堆叠具有通过图案化的光致抗蚀剂层部分暴露的含铬层，提供包括Cl 2，O 2的蚀刻气体混合物 和至少一种烃气体输送到处理室中，其中Cl 2和O 2以大于约9的Cl 2：O 2比供应，提供RF源功率以从蚀刻气体混合物形成等离子体，并且蚀刻含铬 在等离子体存在下穿过图案化的光致抗蚀剂层。