Wideband back-illuminated electromagnetic radiation detectors

    公开(公告)号:US12206032B2

    公开(公告)日:2025-01-21

    申请号:US17385813

    申请日:2021-07-26

    Applicant: Apple Inc.

    Abstract: An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

    Electronic Devices with Low Phase Noise Frequency Generation

    公开(公告)号:US20230353093A1

    公开(公告)日:2023-11-02

    申请号:US18186125

    申请日:2023-03-17

    Applicant: Apple Inc.

    CPC classification number: H03D7/165 H04B10/6164 H04B10/63 H04B10/25759

    Abstract: An electronic device may include clocking circuitry with primary and secondary lasers that generate first and second optical local oscillator (LO) signals. A phase-locked loop (PLL) may tune the secondary laser based to phase lock the first and second optical LO signals. A self-injection locking loop path may couple an output of the secondary laser to its input. The self-injection locking loop path may include a first mixer and a second mixer. The first mixer may generate a beat signal using the first and second optical LO signals. The second mixer may generate a self-injection locking signal based on the first optical LO signal and the beat signal. A delay line or optical resonator may iteratively self-inject the self-injection locking signal onto the secondary laser. This may serve to minimize phase noise and jitter of the optical LO signals.

    Wideband Back-Illuminated Electromagnetic Radiation Detectors

    公开(公告)号:US20220037543A1

    公开(公告)日:2022-02-03

    申请号:US17385813

    申请日:2021-07-26

    Applicant: Apple Inc.

    Abstract: An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

    Integrated edge-generated vertical emission laser

    公开(公告)号:US12206222B2

    公开(公告)日:2025-01-21

    申请号:US17407016

    申请日:2021-08-19

    Applicant: Apple Inc.

    Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

    Integrated Edge-Generated Vertical Emission Laser

    公开(公告)号:US20220059992A1

    公开(公告)日:2022-02-24

    申请号:US17407016

    申请日:2021-08-19

    Applicant: Apple Inc.

    Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

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