公开(公告)号：US20110236704A1

公开(公告)日：2011-09-29

申请号：US13128721

申请日：2009-10-13

Applicant: Antoine Barbier ,  Odile Bezencenet ,  Daniel Bonamy

Inventor： Antoine Barbier ,  Odile Bezencenet ,  Daniel Bonamy

IPC: H01F10/00 ,  B05D3/00 ,  B32B9/00

CPC classification number: H01F41/32 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/002 ,  H01F41/14 ,  H01F41/302 ,  H01F41/303 ,  Y10T428/325

Abstract: A process for fabricating an antiferromagnetic layer includes depositing on a substrate a first layer with a sufficient thickness to establish a specific magnetic order from among one of the following orders, ferrimagnetic, ferromagnetic, paramagnetic, diamagnetic; after establishing the ferrimagnetic, ferromagnetic, paramagnetic or diamagnetic order, applying a magnetic field with sufficient amplitude and duration to shift walls of the magnetic domains of the first layer from a first statistical distribution to a second statistical distribution, the second statistical distribution presenting a minimum magnetic domain size strictly greater than the minimum magnetic domain size of the first statistical distribution and; for a given area, magnetic domains in which the perimeter is greater than that of domains from the first statistical distribution; and depositing on the first layer whose magnetic domain walls have been shifted, a second layer of an antiferromagnetic material in which at least one of the components of material of the first layer may be integrated by diffusion during growth.

Abstract translation: 制造反铁磁性层的方法包括在基底上沉积足够厚度的第一层，以从以下顺序之一建立特定磁性顺序，亚铁磁性，铁磁性，顺磁性，抗磁性; 在建立铁磁性，铁磁性，顺磁性或抗磁性顺序之后，施加足够的幅度和持续时间的磁场将第一层的磁畴的壁从第一统计分布转移到第二统计分布，第二统计分布呈现最小值 磁畴尺寸严格大于最小磁畴尺寸的第一次统计分布; 对于给定区域，其周长大于来自第一统计分布的域的磁畴; 并且沉积在其磁畴壁已经移动的第一层上，第二层反铁磁性材料，其中第一层的材料的至少一种成分可通过生长期间的扩散而被整合。