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公开(公告)号：US11802922B2
公开(公告)日：2023-10-31
申请号：US17147819
申请日：2021-01-13
Applicant: Allegro MicroSystems, LLC
Inventor： Bruno Luis Uberti , Gerardo A. Monreal , Hernán D. Romero
CPC classification number: G01R33/077 , H10N50/80
Abstract: A magnetic field sensor can be are based upon three element vertical Hall element building blocks, e.g., three element or six element vertical Hall element arrangements, all arranged in a circle. In some embodiments, the circle of vertical Hall elements can be arranged as a CVH sensing element.
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2.发明申请Magnetic Field Sensor for Detecting a Magnetic Field In Any Direction Above Thresholds 有权磁场传感器，用于检测任何高于阈值的方向的磁场公开(公告)号：US20140347044A1
公开(公告)日：2014-11-27
申请号：US14277218
申请日：2014-05-14
Applicant: Allegro Microsystems, LLC
Inventor： Gerardo A. Monreal , Bruno Luis Uberti
IPC: G01R33/07
CPC classification number: G01R33/07 , G01R33/0023 , G01R33/0206
Abstract: A magnetic field sensor includes first, second, and third magnetic field sensing elements having respective first, second and third maximum response axes, the first second and third maximum response axes pointing along respective first, second, and third different coordinate axes. In response to a magnetic field, the first, second, and third magnetic field sensing elements are operable to generate first second, and third magnetic field signals. Signals representative of the first, second, and third magnetic field signals are compared with thresholds to determine if the magnetic field is greater than the thresholds. A corresponding method is also provided.
Abstract translation: 磁场传感器包括具有相应的第一，第二和第三最大响应轴的第一，第二和第三磁场感测元件，第一和第三最大响应轴指向相应的第一，第二和第三不同坐标轴。 响应于磁场，第一，第二和第三磁场感测元件可操作以产生第一和第三磁场信号。 将代表第一，第二和第三磁场信号的信号与阈值进行比较，以确定磁场是否大于阈值。 还提供了相应的方法。
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3.发明授权公开(公告)号：US11327882B2
公开(公告)日：2022-05-10
申请号：US16782139
申请日：2020-02-05
Applicant: Allegro MicroSystems, LLC
Inventor： Muhammed Sarwar , Vyankatesh Gupta , James McClay , Sundar Chetlur , Harianto Wong , Gerardo A. Monreal , Nicolás Rafael Biberidis , Octavio H. Alpago , Nicolas Rigoni
Abstract: A method comprising: performing a first read from an address in a data storage module by using a first read voltage; storing, in a first register, data that is retrieved from the data storage module as a result of the first read; performing a second read from the address by using a second read voltage; storing, in a second register, data that is retrieved from the data storage module as a result of the second read; detecting whether a weak bit condition is present at the address based on the data that is stored in the first register and the data that is stored in the second register; and correcting the weak bit condition, when the weak bit condition is present at the address.
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4.发明申请公开(公告)号：US20210240606A1
公开(公告)日：2021-08-05
申请号：US16782139
申请日：2020-02-05
Applicant: Allegro MicroSystems, LLC
Inventor： Muhammed Sarwar , Vyankatesh Gupta , James McClay , Sundar Chetlur , Harianto Wong , Gerardo A. Monreal , Nicolás Rafael Biberidis , Octavio H. Alpago , Nicolas Rigoni
Abstract: A method comprising: performing a first read from an address in a data storage module by using a first read voltage; storing, in a first register, data that is retrieved from the data storage module as a result of the first read; performing a second read from the address by using a second read voltage; storing, in a second register, data that is retrieved from the data storage module as a result of the second read; detecting whether a weak bit condition is present at the address based on the data that is stored in the first register and the data that is stored in the second register; and correcting the weak bit condition, when the weak bit condition is present at the address.
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公开(公告)号：US10608168B2
公开(公告)日：2020-03-31
申请号：US15724576
申请日：2017-10-04
Applicant: Allegro MicroSystems, LLC
Inventor： Juan Manuel Cesaretti , Gerardo A. Monreal , Daniel Musciano
Abstract: A planar Hall effect element be formed upon or can include a P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hail effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.
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Patent Agency Ranking
公开(公告)号：US10078117B2
公开(公告)日：2018-09-18
申请号：US14870834
申请日：2015-09-30
Applicant: Allegro MicroSystems, LLC
Inventor： Gerardo A. Monreal , Andreas P. Friedrich , Claude Fermon , Myriam Pannetier-Lecoeur
CPC classification number: G01R33/0023 , G01R33/09 , G01R33/093
Abstract: A magnetic field sensor and an associated method use one or more magnetoresistance elements driven with an AC mixing current and experiencing an AC mixing magnetic field to generate a DC voltage signal or a DC voltage signal component related to a slope of a transfer curve of the one or more magnetoresistance elements.
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7.发明申请公开(公告)号：US20160200245A1
公开(公告)日：2016-07-14
申请号：US14993495
申请日：2016-01-12
Applicant: Allegro Microsystems, LLC
Inventor： Manuel Rivas , Gerardo A. Monreal , Christine M. Graham , Eric G. Shoemaker
CPC classification number: G01R33/072 , B60Q3/20 , B60Q3/30 , B60Q3/80 , G01R33/007 , G01R33/0082 , G01R33/07 , G05F3/08 , H05B33/0854
Abstract: An integrated magnetic field sensor includes a magnetic field sensing circuit and a power driving circuit disposed upon or within a common substrate. A method of powering on and off a load uses the above integrated magnetic field sensor.
Abstract translation: 集成磁场传感器包括设置在共同衬底上或内部的磁场感测电路和电力驱动电路。 上电和断开负载的方法使用上述集成磁场传感器。
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公开(公告)号：US20220342010A1
公开(公告)日：2022-10-27
申请号：US17238543
申请日：2021-04-23
Applicant: Allegro MicroSystems, LLC
Inventor： Hernán D. Romero , Gerardo A. Monreal
Abstract: An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.
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公开(公告)号：US20220221533A1
公开(公告)日：2022-07-14
申请号：US17147819
申请日：2021-01-13
Applicant: Allegro MicroSystems, LLC
Inventor： Bruno Luis Uberti , Gerardo A. Monreal , Hernán D. Romero
Abstract: A magnetic field sensor can be are based upon three element vertical Hall element building blocks, e.g., three element or six element vertical Hall element arrangements, all arranged in a circle. In some embodiments, the circle of vertical Hall elements can be arranged as a CVH sensing element.
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公开(公告)号：US20190103551A1
公开(公告)日：2019-04-04
申请号：US15724576
申请日：2017-10-04
Applicant: Allegro MicroSystems, LLC
Inventor： Juan Manuel Cesaretti , Gerardo A. Monreal , Daniel Musciano
IPC: H01L43/06
Abstract: A planar Hall effect element be formed upon or can include a the P-type substrate. The planar Hall effect element can also include a Hall plate region. The Hall plate region can include a first portion of an N-type layer disposed over the P-type substrate. The first portion of the N-type layer can include a top surface distal from the P-type substrate, and a continuous N-type outer boundary intersecting the top surface of the Hall plate region. The planar Hall effect element can also include an isolation region having a continuous outer boundary and having a continuous inner boundary, the continuous inner boundary in contact with all of the outer boundary of the Hall plate region, the P-type substrate and the first portion of the N-type layer not forming a P/N junction.
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