Methods And Apparatus For Simulating Interaction Of Radiation With Structures, Metrology Methods And Apparatus, Device Manufacturing Method
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    发明申请
    Methods And Apparatus For Simulating Interaction Of Radiation With Structures, Metrology Methods And Apparatus, Device Manufacturing Method 审中-公开
    用于模拟辐射与结构的相互作用的方法和装置,计量方法和装置,装置制造方法

    公开(公告)号:US20170017738A1

    公开(公告)日:2017-01-19

    申请号:US15209290

    申请日:2016-07-13

    Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904′, 906′) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.

    Abstract translation: 通过从观测的衍射辐射重建来测量结构(900)的参数。 该方法包括以下步骤:(a)定义结构模型以表示二维或三维模型空间中的结构; (b)使用结构模型来模拟辐射与结构的相互作用; 和(c)重复步骤(b),同时改变结构模型的参数。 结构模型沿模型空间的至少第一维度(Z)分为一系列切片(a-f)。 通过划分成切片,至少一个子结构的倾斜面(904,906)通过沿着模型空间(X)的至少第二维度的一系列步骤(904',906')近似。 切片的数量可能随参数变化而动态变化。 接近所述倾斜面的步骤数保持恒定。 引入附加切割(1302,1304),而不引入相应的步骤。

    MODULAR AUTOENCODER MODEL FOR MANUFACTURING PROCESS PARAMETER ESTIMATION

    公开(公告)号:US20240354552A1

    公开(公告)日:2024-10-24

    申请号:US18259344

    申请日:2021-12-20

    CPC classification number: G06N3/0455

    Abstract: A modular autoencoder model is described. The modular autoencoder model comprises input models configured to process one or more inputs to a first level of dimensionality suitable for combination with other inputs: a common model configured to: reduce a dimensionality of combined processed inputs to generate low dimensional data in a latent space; and expand the low dimensional data in the latent space into one or more expanded versions of the one or more inputs suitable for generating one or more different outputs; output models configured to use the one or more expanded versions of the one or more inputs to generate the one or more different outputs, the one or more different outputs being approximations of the one or more inputs; and a prediction model configured to estimate one or more parameters based on the low dimensional data in the latent space.

    Method and Metrology Apparatus for Determining Estimated Scattered Radiation Intensity

    公开(公告)号:US20200057386A1

    公开(公告)日:2020-02-20

    申请号:US16539208

    申请日:2019-08-13

    Abstract: A method of determining an estimated intensity of radiation scattered by a target illuminated by a radiation source, has the following steps: obtaining and training (402) a library REFLIB of wavelength-dependent reflectivity as a function of the wavelength, target structural parameters and angle of incidence R(λ,θ,x,y); determining (408) a wide-band library (W-BLIB) of integrals of wavelength-dependent reflectivity R of the target in a Jones framework over a range of radiation source wavelengths λ; training (TRN) (410) the wide-band library; and determining (412), using the trained wide-band library, an estimated intensity (INT) of radiation scattered by the target illuminated by the radiation source.

    MAPPING METRICS BETWEEN MANUFACTURING SYSTEMS

    公开(公告)号:US20230288815A1

    公开(公告)日:2023-09-14

    申请号:US18019968

    申请日:2021-07-26

    CPC classification number: G03F7/70525 G03F7/70504 G03F7/706839 G03F7/706845

    Abstract: Methods and systems for determining a mapped intensity metric are described. Determining the mapped intensity metric includes determining an intensity metric for a manufacturing system. The intensity metric is determined based on a reflectivity of a location on a substrate and a manufacturing system characteristic. Determining the mapped intensity metric also includes determining a mapped intensity metric for a reference system. The reference system has a reference system characteristic. The mapped intensity metric is determined based on the intensity metric, the manufacturing system characteristic, and the reference system characteristic, to mimic determination of the intensity metric for the manufacturing system using the reference system. In some embodiments, the reference system is virtual, and the manufacturing system is physical.

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