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1.发明公开公开(公告)号：US20230244151A1
公开(公告)日：2023-08-03
申请号：US18129169
申请日：2023-03-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Leon Paul VAN DIJK , Oktay YILDIRIM , Orion Jonathan Pierre MOURAILLE
CPC classification number: G03F7/70675 , G03F1/70
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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公开(公告)号：US20180004085A1
公开(公告)日：2018-01-04
申请号：US15538191
申请日：2015-12-01
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/0045 , G03F7/0002 , G03F7/0043 , G03F7/0047 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/2004 , G03F7/2041 , G03F7/30
Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.
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