公开(公告)号：US20210048758A1

公开(公告)日：2021-02-18

申请号：US16966536

申请日：2019-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Leon Paul VAN DIJK ,  Orion Jonathan Pierre MOURAILLE ,  Anne Marie PASTOL

IPC: G03F9/00 ,  G03F7/20

Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.

公开(公告)号：US20230244151A1

公开(公告)日：2023-08-03

申请号：US18129169

申请日：2023-03-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Leon Paul VAN DIJK ,  Oktay YILDIRIM ,  Orion Jonathan Pierre MOURAILLE

IPC: G03F7/20 ,  G03F1/70

CPC classification number: G03F7/70675 ,  G03F1/70

Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.

公开(公告)号：US20190204749A1

公开(公告)日：2019-07-04

申请号：US16325228

申请日：2017-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Jozef Maria FINDERS ,  Orion Jonathan Pierre MOURAILLE ,  Anton Bernhard VAN OOSTEN

IPC: G03F7/20

Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.