OVERLAY METROLOGY BASED ON TEMPLATE MATCHING WITH ADAPTIVE WEIGHTING

    公开(公告)号:US20250044710A1

    公开(公告)日:2025-02-06

    申请号:US18714547

    申请日:2022-12-13

    Abstract: A method of image template matching for multiple process layers of, for example, semiconductor substrate with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the image. A method of template matching a grouped pattern or artifacts in a composed template is described, wherein the pattern comprises deemphasized areas weighted less than the image templates. A method of generating an image template based on a synthetic image is described. The synthetic image can be generated based on process and image modeling. A method of selecting a grouped pattern or artifacts and generating a composed template is described. A method of per layer image template matching is described.

    UTILIZE PATTERN RECOGNITION TO IMPROVE SEM CONTOUR MEASUREMENT ACCURACY AND STABILITY AUTOMATICALLY

    公开(公告)号:US20210263426A1

    公开(公告)日:2021-08-26

    申请号:US17256332

    申请日:2019-06-21

    Abstract: A method for improving a process model by measuring a feature on a printed design that was constructed based in part on a target design is disclosed. The method includes obtaining a) an image of the printed design from an image capture device and b) contours based on shapes in the image. The method also includes identifying, by a pattern recognition program, patterns on the target design that include the feature and determining coordinates, on the contours, that correspond to the feature. The method further includes improving the process model by at least a) providing a measurement of the feature based on the coordinates and b) calibrating the process model based on a comparison of the measurement with a corresponding feature in the target design.

    DETERMINING METRICS FOR A PORTION OF A PATTERN ON A SUBSTRATE

    公开(公告)号:US20230161269A1

    公开(公告)日:2023-05-25

    申请号:US17919189

    申请日:2021-05-07

    CPC classification number: G03F7/70633 G03F7/70625 G06T7/11 G06T2207/10061

    Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion of the pattern is blocked, for example with a geometrical block mask, based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.

    METHOD FOR DETERMINING STOCHASTIC VARIATION OF PRINTED PATTERNS

    公开(公告)号:US20220137514A1

    公开(公告)日:2022-05-05

    申请号:US17430517

    申请日:2020-01-30

    Abstract: A method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) images of the substrate including a printed pattern corresponding to a reference pattern, (ii) an averaged image of the images, and (iii) a composite contour based on the averaged image. Further, the composite contour is aligned with respect to a reference contour of the reference pattern and contours are extracted from the images based on both the aligned composite contour and the output of die-to-database alignment of the composite contour. Further, the method determines a plurality of pattern measurements based on the contours and the measurement data corresponding to the printed patterns based on the plurality of the pattern measurements. Further, the method determines a one or more process variations such as stochastic variation, inter-die variation, intra-die variation and/or total variation.

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