公开(公告)号：US09167625B2

公开(公告)日：2015-10-20

申请号：US13677133

申请日：2012-11-14

申请人： ASM IP Holding B.V.

发明人： Eric Shero ,  Michael Halpin ,  Jerry Winkler

IPC分类号： H05B3/68 ,  A21B2/00 ,  H05B1/02 ,  H01L21/67

CPC分类号： H05B1/0233 ,  H01L21/67115 ,  H05B3/68

摘要： A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.

摘要翻译： 一种反应室，包括位于所述反应室内的基板支撑构件，所述反应室具有第一区域和第二区域，所述反应室设置在所述第二室内并且可与所述基板支撑构件一起移动，并且其中所述屏蔽件至少与 底板支撑构件的底面。

公开(公告)号：US20160118261A1

公开(公告)日：2016-04-28

申请号：US14919180

申请日：2015-10-21

申请人： ASM IP Holding B.V.

发明人： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC分类号： H01L21/285 ,  H01L29/49

CPC分类号： H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

摘要： A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

摘要翻译： 在反应空间中在基板上沉积包含氮的钛铝或钽铝薄膜的方法可以包括至少一个沉积循环。 沉积循环可以包括交替地和顺序地接触基底与气相Ti或Ta前体和气相Al前体。 气相Ti或Ta前体和气相Al前体中的至少一种可以在气相氮前体存在下与基底接触。

公开(公告)号：US09299595B2

公开(公告)日：2016-03-29

申请号：US14563044

申请日：2014-12-08

申请人： ASM IP Holding B.V.

发明人： Todd Dunn ,  Fred Alokozai ,  Jerry Winkler ,  Michael Halpin

IPC分类号： F27D11/00 ,  H01L21/67 ,  H01L21/687 ,  F28D15/00

CPC分类号： H01L21/67103 ,  F28D15/00 ,  H01L21/67109 ,  H01L21/68714 ,  H01L21/68742

摘要： A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

公开(公告)号：US20150167159A1

公开(公告)日：2015-06-18

申请号：US14634342

申请日：2015-02-27

申请人： ASM IP Holding B.V.

发明人： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC分类号： C23C16/44

CPC分类号： C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

摘要： A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

摘要翻译： 一种反应室，包括用于处理基板的上部区域，用于装载基板的下部区域，可在反应室内移动的基座，位于基座周边的第一密封构件，位于上部区域和 下部区域，其中第一和第二密封构件彼此选择性地接合以限制上部区域和下部区域之间的连通。

公开(公告)号：US11139383B2

公开(公告)日：2021-10-05

申请号：US16849144

申请日：2020-04-15

申请人： ASM IP Holding B.V.

发明人： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC分类号： H01L29/49 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L29/51

摘要： A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20190043962A1

公开(公告)日：2019-02-07

申请号：US15997520

申请日：2018-06-04

申请人： ASM IP Holding B.V.

发明人： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC分类号： H01L29/49 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

摘要： A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20150096973A1

公开(公告)日：2015-04-09

申请号：US14563044

申请日：2014-12-08

申请人： ASM IP Holding B.V.

发明人： Todd Dunn ,  Fred Alokozai ,  Jerry Winkler ,  Michael Halpin

IPC分类号： H01L21/67 ,  F28D15/00 ,  H01L21/687

CPC分类号： H01L21/67103 ,  F28D15/00 ,  H01L21/67109 ,  H01L21/68714 ,  H01L21/68742

摘要： A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

摘要翻译： 晶片处理装置可以包括具有顶侧和背面的基座，具有间隔构件和加热构件的基座加热器，可移除地安装在基座和基座加热器之间的垫片，由基座背面形成的空腔，基座 加热器和垫片，与空腔连通的流体入口以及与空腔连通的多个流体出口。

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

申请人： ASM IP Holding B.V.

发明人： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC分类号： H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

摘要： A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US09340874B2

公开(公告)日：2016-05-17

申请号：US14634342

申请日：2015-02-27

申请人： ASM IP Holding B.V.

发明人： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC分类号： B01J19/00 ,  C23C16/44 ,  B01J8/00 ,  H01L21/67 ,  C23C16/458

CPC分类号： C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

摘要： A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

公开(公告)号：US20200328285A1

公开(公告)日：2020-10-15

申请号：US16849144

申请日：2020-04-15

申请人： ASM IP Holding B.V.

发明人： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC分类号： H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

摘要： A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.