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公开(公告)号:US10920319B2
公开(公告)日:2021-02-16
申请号:US16245698
申请日:2019-01-11
发明人: Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号: C23C16/455 , C23C16/34 , H01L21/3213 , H01J37/32 , H01L21/285 , C23C16/458
摘要: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
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公开(公告)号:US20200087788A1
公开(公告)日:2020-03-19
申请号:US16132796
申请日:2018-09-17
发明人: Tien Fak Tan , Saravjeet Singh , Tae Won Kim
IPC分类号: C23C16/455 , C23C16/509
摘要: Exemplary semiconductor showerheads may include a first plate characterized by a first surface in which a plurality of first apertures are defined, and further characterized by a second surface opposite the first surface and from which extends a plurality of annular members. Each annular member of the plurality of annular members may extend from a separate first aperture of the plurality of first apertures. A channel may be defined by each first aperture and corresponding annular member. The showerheads may also include a second plate coupled with the first plate and characterized by a first surface facing the first plate and a second surface opposite the first surface. A plurality of second apertures may be defined through the second plate within an internal area of the second plate. Each annular member of the plurality of annular members may extend within a separate second aperture of the plurality of second apertures.
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公开(公告)号:US11834744B2
公开(公告)日:2023-12-05
申请号:US18173704
申请日:2023-02-23
发明人: Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号: H01J37/32 , C23C16/455 , C23C16/34 , H01L21/3213 , H01L21/285 , C23C16/458
CPC分类号: C23C16/45565 , C23C16/34 , C23C16/4581 , C23C16/45574 , H01J37/32495 , H01J37/32559 , H01L21/28512 , H01L21/3213
摘要: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
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公开(公告)号:US20230203657A1
公开(公告)日:2023-06-29
申请号:US18173704
申请日:2023-02-23
发明人: Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号: C23C16/455 , C23C16/34 , H01L21/3213 , H01J37/32 , H01L21/285 , C23C16/458
CPC分类号: C23C16/45565 , C23C16/45574 , C23C16/34 , H01L21/3213 , H01J37/32495 , H01J37/32559 , H01L21/28512 , C23C16/4581
摘要: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
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公开(公告)号:US10522371B2
公开(公告)日:2019-12-31
申请号:US15159478
申请日:2016-05-19
发明人: Tien Fak Tan , Lok Kee Loh , Dmitry Lubomirsky , Soonwook Jung , Martin Yue Choy , Soonam Park
IPC分类号: H01L21/67 , H01J37/32 , H01L21/3065
摘要: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.
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公开(公告)号:US09659753B2
公开(公告)日:2017-05-23
申请号:US14454493
申请日:2014-08-07
发明人: Tae Cho , Sang Won Kang , Dongqing Yang , Raymond W. Lu , Peter Hillman , Nicholas Celeste , Tien Fak Tan , Soonam Park , Dmitry Lubomirsky
IPC分类号: H01J37/32
CPC分类号: H01J37/3255 , H01J37/32082
摘要: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.
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公开(公告)号:US11302520B2
公开(公告)日:2022-04-12
申请号:US14747367
申请日:2015-06-23
发明人: Tien Fak Tan , Dmitry Lubomirsky , Kirby H. Floyd , Son T. Nguyen , David Palagashvili , Alexander Tam , Shaofeng Chen
IPC分类号: H01J37/32
摘要: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.
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公开(公告)号:US20210189564A1
公开(公告)日:2021-06-24
申请号:US17176411
申请日:2021-02-16
发明人: Laksheswar Kalita , Soonam Park , Dmitry Lubomirsky , Tien Fak Tan , LokKee Loh , Saravjeet Singh , Tae Won Kim
IPC分类号: C23C16/455 , C23C16/34 , H01L21/3213 , H01J37/32 , H01L21/285 , C23C16/458
摘要: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
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公开(公告)号:US10699879B2
公开(公告)日:2020-06-30
申请号:US15955588
申请日:2018-04-17
发明人: Tien Fak Tan , Saravjeet Singh , Dmitry Lubomirsky , Tae Wan Kim , Kenneth D. Schatz , Tae Seung Cho , Lok Kee Loh
摘要: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.
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公开(公告)号:US20190272998A1
公开(公告)日:2019-09-05
申请号:US16416865
申请日:2019-05-20
发明人: Dongqing Yang , Tien Fak Tan , Peter Hillman , Lala Zhu , Nitin K. Ingle , Dmitry Lubomirsky , Christopher Snedigar , Ming Xia
IPC分类号: H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/3105
摘要: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
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