公开(公告)号：US10815561B2

公开(公告)日：2020-10-27

申请号：US16295328

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  Keith Miller ,  Sree Rangasai Kesapragada ,  Sudarsan Srinivasan

IPC: C23C14/04 ,  C23C14/34 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

公开(公告)号：US20210020484A1

公开(公告)日：2021-01-21

申请号：US16914103

申请日：2020-06-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith Miller ,  Farzad HOUSHMAND ,  Prasoon SHUKLA

IPC: H01L21/677 ,  H01L21/673

Abstract: Methods and apparatus for a PVD chamber are provided herein. In some embodiments, a selective PVD chamber includes a first housing surrounding a movable substrate support; a second housing adjacent the first housing; an opening disposed between the first housing and the second housing that partially exposes a top surface of the movable substrate support, wherein the opening includes a first curved side; and an elongate target disposed in the second housing to provide a stream of material flux from the elongate target into the first housing via the opening.

公开(公告)号：US20190276926A1

公开(公告)日：2019-09-12

申请号：US16295328

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  Keith Miller ,  Sree Rangasai Kesapragada ,  Sudarsan Srinivasan

IPC: C23C14/04 ,  H01L21/02 ,  H01L21/285 ,  C23C14/34

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.