Abstract:
A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.
Abstract:
Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.
Abstract:
Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.