公开(公告)号：US11749543B2

公开(公告)日：2023-09-05

申请号：US16921741

申请日：2020-07-06

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Yu Lei ,  Anup Phatak ,  Hyman W. H. Lam ,  Chong Jiang ,  Malcolm Emil Delaney ,  Yufei Hu

IPC分类号： H01L21/67 ,  H05B1/02 ,  G06N3/08

CPC分类号： H01L21/67253 ,  G06N3/08 ,  H05B1/0233

摘要： A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

公开(公告)号：US09828669B2

公开(公告)日：2017-11-28

申请号：US14853551

申请日：2015-09-14

申请人： Applied Materials, Inc.

发明人： Daoying Song ,  Chong Jiang ,  Byung-Sung Leo Kwak

IPC分类号： C23C14/58 ,  C23C16/56 ,  H01M4/04 ,  H01M4/1391 ,  H01M4/525 ,  H01M10/0585 ,  H01M6/40 ,  H01M10/0525 ,  H01M14/00 ,  C23C14/08 ,  C23C14/24 ,  C23C14/34 ,  G02F1/155 ,  H01M4/131

CPC分类号： C23C14/5806 ,  C23C14/08 ,  C23C14/24 ,  C23C14/34 ,  C23C14/3485 ,  C23C16/56 ,  G02F1/155 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/0426 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/525 ,  H01M6/40 ,  H01M10/0525 ,  H01M10/0585 ,  H01M14/005 ,  Y02E60/122 ,  Y02P70/54

摘要： Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

公开(公告)号：US20220005713A1

公开(公告)日：2022-01-06

申请号：US16921741

申请日：2020-07-06

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Yu Lei ,  Anup Phatak ,  Hyman Lam ,  Chong Jiang ,  Malcolm Emil Delaney ,  Yufei Hu

IPC分类号： H01L21/67 ,  G06N3/08 ,  H05B1/02

摘要： A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.

公开(公告)号：US09768450B2

公开(公告)日：2017-09-19

申请号：US14653730

申请日：2013-12-17

申请人： APPLIED MATERIALS, INC.

发明人： Daoying Song ,  Chong Jiang ,  Byung-Sung Leo Kwak

IPC分类号： B44C1/22 ,  H01M6/40 ,  C23C14/08 ,  C23C14/34 ,  H01M4/04 ,  H01M10/0585 ,  H01M10/04

CPC分类号： H01M6/40 ,  C23C14/088 ,  C23C14/34 ,  H01M4/0426 ,  H01M10/0436 ,  H01M10/0585

摘要： A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

公开(公告)号：US09252320B2

公开(公告)日：2016-02-02

申请号：US14673249

申请日：2015-03-30

申请人： APPLIED MATERIALS, INC.

发明人： Daoying Song ,  Chong Jiang ,  Byung-Sung Leo Kwak ,  Joseph G. Gordon, II

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L31/18 ,  H01L31/024 ,  H01L31/0216 ,  H01L31/0463

CPC分类号： H01L31/1876 ,  H01L31/02164 ,  H01L31/02167 ,  H01L31/024 ,  H01L31/0463 ,  H01L31/18 ,  H01M4/0471 ,  H01M6/40 ,  H01M10/0436

摘要： Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning.

公开(公告)号：US09240508B2

公开(公告)日：2016-01-19

申请号：US14673151

申请日：2015-03-30

申请人： APPLIED MATERIALS, INC.

发明人： Daoying Song ,  Chong Jiang ,  Byung-Sung Leo Kwak ,  Joseph G. Gordon, II

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L31/0463 ,  H01L31/024 ,  H01L31/0216

CPC分类号： H01L31/1876 ,  H01L31/02164 ,  H01L31/02167 ,  H01L31/024 ,  H01L31/0463 ,  H01L31/18 ,  H01M4/0471 ,  H01M6/40 ,  H01M10/0436

摘要： Selective removal of specified layers of thin film structures and devices, such as solar cells, electrochromics, and thin film batteries, by laser direct patterning is achieved by including heat and light blocking layers in the device/structure stack immediately adjacent to the specified layers which are to be removed by laser ablation. The light blocking layer is a layer of metal that absorbs or reflects a portion of the laser energy penetrating through the dielectric/semiconductor layers and the heat blocking layer is a conductive layer with thermal diffusivity low enough to reduce heat flow into underlying metal layer(s), such that the temperature of the underlying metal layer(s) does not reach the melting temperature, Tm, or in some embodiments does not reach (Tm)/3, of the underlying metal layer(s) during laser direct patterning.

公开(公告)号：US20160002771A1

公开(公告)日：2016-01-07

申请号：US14853551

申请日：2015-09-14

申请人： Applied Materials, Inc.

发明人： Daoying SONG ,  Chong Jiang ,  Byung-Sung Leo Kwak

IPC分类号： C23C14/58 ,  H01M4/131 ,  G02F1/155 ,  C23C14/08 ,  C23C14/34 ,  H01M4/04 ,  C23C14/24

CPC分类号： C23C14/5806 ,  C23C14/08 ,  C23C14/24 ,  C23C14/34 ,  C23C14/3485 ,  C23C16/56 ,  G02F1/155 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/0426 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/525 ,  H01M6/40 ,  H01M10/0525 ,  H01M10/0585 ,  H01M14/005 ,  Y02E60/122 ,  Y02P70/54

摘要： Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

摘要翻译： 微波辐射可以施加到用于电化学装置的各个层的快速热处理（RTP）（包括退火，结晶，致密化，成型等）的电化学装置，以及包括体薄膜电池和薄的电池的装置堆 胶片电致变色装置。 制造电化学装置的方法可以包括：在衬底上沉积电化学装置的层; 并对该层进行微波退火，其中微波退火包括在层中选择具有优先微波能量吸收的退火条件。 一种用于形成电化学装置的装置可以包括：在衬底上沉积电化学装置层的第一系统; 以及第二系统以对所述层进行微波退火，其中所述第二系统被配置为在所述器件层中提供优先的微波能量吸收。

公开(公告)号：US09116409B1

公开(公告)日：2015-08-25

申请号：US13898886

申请日：2013-05-21

申请人： APPLIED MATERIALS, INC.

发明人： Lizhong Sun ,  Byung-Sung Leo Kwak ,  Jan C. Isidorsson ,  Chong Jiang

IPC分类号： G02F1/15 ,  G02F1/03 ,  G09G3/19 ,  H04N9/16

CPC分类号： G02F1/155 ,  G02F2202/36

摘要： The present invention generally relates to electrochemical devices, such as electrochromic (EC) devices and thin film batteries (TFB), and in particular to anodes of electrochemical devices with improved intercalation and/or transport properties. Some embodiments of the invention include anodes, such as nickel oxide, doped with Si, Sn, SiO2 and/or SnO2, which may be in the form of nanoparticles or even substituted atoms/molecules. These nanoparticles/substituted atoms, which have higher lithium intercalation capability, distort the lattice of the anode, improving movement and intercalation of Li ions. In some other embodiments, the anode may be formed of silicon oxide and/or tin oxide, which materials have good transport and intercalation of Li ions.

摘要翻译： 本发明一般涉及电化学装置，例如电致变色（EC）装置和薄膜电池（TFB），尤其涉及具有改进的嵌入和/或传输性能的电化学装置的阳极。 本发明的一些实施方案包括掺杂有Si，Sn，SiO 2和/或SnO 2的阳极，例如氧化镍，其可以是纳米颗粒或甚至取代的原子/分子的形式。 这些具有较高锂嵌入能力的纳米粒子/取代原子使得阳极的晶格失真，改善了Li离子的运动和嵌入。 在一些其它实施例中，阳极可以由氧化硅和/或氧化锡形成，该材料具有良好的Li离子的输送和嵌入。

公开(公告)号：US09765426B1

公开(公告)日：2017-09-19

申请号：US13867865

申请日：2013-04-22

申请人： APPLIED MATERIALS, INC.

发明人： Byung-Sung Leo Kwak ,  Lizhong Sun ,  Jan Isidorsson ,  Chong Jiang

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/34

CPC分类号： C23C14/3414 ,  H01J37/3426 ,  H01J37/3429

摘要： The present invention relates to sputter targets for electrochemical device layer deposition comprising a lithium-containing target material with near-metallic electrical conductivity which includes (a) at least one metal and (b) a lithium-containing material, the lithium-containing material being selected from the group consisting of lithium metal and a lithium-containing salt, wherein the at least one metal and the lithium-containing material are formed into the lithium-containing target material and wherein the lithium-containing target material is configured with a composition sufficient for physical vapor deposition of a lithium-containing electrode of the electrochemical device in a single step, the lithium-containing electrode as deposited requiring no further lithium doping. Furthermore, the composition of the metallic lithium-containing target material may be configured to provide a low enough electrical resistance to permit DC sputtering. Chambers and tools including the sputter target and process flows for fabricating electrochemical devices including steps utilizing the sputter target are also described.

公开(公告)号：US09356316B2

公开(公告)日：2016-05-31

申请号：US13865447

申请日：2013-04-18

申请人： APPLIED MATERIALS, INC.

发明人： Lizhong Sun ,  Chong Jiang ,  Byung-Sung Leo Kwak

IPC分类号： H01M10/0562 ,  H01M6/18 ,  H01M2/16 ,  H01M6/14 ,  B05D5/12 ,  H01G11/56 ,  G02F1/15 ,  H01L49/02 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0585

CPC分类号： H01M10/0562 ,  G02F1/1508 ,  H01G11/56 ,  H01L28/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2300/0068 ,  Y02E60/13

摘要： The present invention relates to vacuum-deposited solid state electrolyte layers with high ionic conductivity in electrochemical devices, and methods and tools for fabricating said electrolyte layers. An electrochemical device may comprise solid state electrolytes with incorporated thin layers and/or particles of transition metal oxides, silicon, silicon oxide, or other suitable materials that will induce an increase in ionic conductivity of the electrolyte stack (for example, materials with which lithium is able to intercalate), or mixtures thereof. An improvement in ionic conductivity of the solid state electrolyte is expected which is proportional to the number of incorporated layers or a function of the distribution uniformity and density of the particles within the electrolyte. Embodiments of the present invention are applicable to solid state electrolytes in a broad range of electrochemical devices including thin film batteries, electrochromic devices and ultracapacitors. The solid state electrolyte layers may be nominally pinhole-free.

摘要翻译： 本发明涉及电化学装置中具有高离子传导性的真空沉积固态电解质层，以及用于制造所述电解质层的方法和工具。 电化学装置可以包括固体电解质，其具有掺入的薄层和/或过渡金属氧化物，硅，氧化硅或其它合适的材料的颗粒，其将引起电解质堆叠的离子导电性的增加（例如，锂 能插入），或其混合物。 期望固体电解质的离子导电性的改善，其与引入的层的数量成比例，或电解质内的颗粒的分布均匀性和密度的函数。 本发明的实施例可应用于包括薄膜电池，电致变色器件和超级电容器在内的宽范围的电化学装置中的固态电解质。 固态电解质层可以标称无针孔。