公开(公告)号：US09455143B2

公开(公告)日：2016-09-27

申请号：US14789075

申请日：2015-07-01

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Aaron Muir Hunter ,  Matthias Bauer ,  Amikam Sade

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268 ,  H01L21/687

CPC classification number: H01L21/02658 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/483 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract translation: 本公开的实施例提供了用于在衬底上形成外延层的方法和装置。 将衬底暴露于脉冲激光辐射以清洁，退火和/或激活衬底的表面。 然后将衬底在自限制沉积工艺中暴露于沉积前体。 衬底可以再次暴露于脉冲激光辐射，然后在第二自限制沉积工艺中暴露于第二沉积前体。 可以根据需要重复该过程，以一次形成非常高质量的一个原子层的外延层。

公开(公告)号：US09214346B2

公开(公告)日：2015-12-15

申请号：US13849097

申请日：2013-03-22

Applicant: Applied Materials, Inc.

Inventor： Amikam Sade

IPC: B23K26/06 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/268 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0661 ,  B23K26/50 ,  B23K2101/40 ,  B23K2103/56

Abstract: Embodiments of the invention generally relate to apparatus and methods of thermal processing of semiconductor substrates using a pellicle to eliminate contamination of an aperture member. The aperture member is disposed between an energy source and a substrate to be processed. The pellicle may be a thin piece of membrane that is substantially transparent to selected forms of energy, such as pulses of electromagnetic energy from a laser that emits radiation at one or more appropriate wavelengths for a desired period of time. In one embodiment, the pellicle is mounted at a predetermined distance from the aperture member and covering pattern openings (i.e., apertures) formed on the aperture member such that any particle contaminants that may land on the aperture member will land on the pellicle. The pellicle keeps particle contaminants out of focus in the final energy field, thereby preventing particle contaminants from being imaged onto the processed substrate.

Abstract translation: 本发明的实施例一般涉及使用防护薄膜的半导体衬底的热处理的装置和方法，以消除孔径构件的污染。 孔径构件设置在能量源和待处理衬底之间。 防护薄膜可以是对选定形式的能量基本透明的薄膜，例如来自激光器的电磁能的脉冲，其以一个或多个适当波长发射所需时间段的辐射。 在一个实施例中，防护薄膜组件安装在孔径构件和形成在孔构件上的覆盖图案开口（即，孔）预定距离处，使得可能落在孔径构件上的任何颗粒污染物将落在防护薄膜组件上。 防护薄膜组件使颗粒污染物在最终能量场中不受焦点的影响，从而防止颗粒污染物成像到经处理的基底上。

公开(公告)号：US10665494B2

公开(公告)日：2020-05-26

申请号：US15885120

申请日：2018-01-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Niranjan Kumar ,  Seshadri Ramaswami ,  Shay Assaf ,  Amikam Sade ,  Andy Constant ,  Maureen Breiling

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/687

Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.

公开(公告)号：US11414740B2

公开(公告)日：2022-08-16

申请号：US16864949

申请日：2020-05-01

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Michael P. Karazim ,  Kevin Vincent Moraes ,  Steven V. Sansoni ,  Andrew J. Constant ,  Jeffrey Allen Brodine ,  Kim Ramkumar Vellore ,  Amikam Sade ,  Niranjan Kumar

IPC: C23C14/04 ,  C23C14/02 ,  C23C14/08 ,  H01L51/00 ,  C23C14/12 ,  H01L51/44

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

公开(公告)号：US20240321649A1

公开(公告)日：2024-09-26

申请号：US18611531

申请日：2024-03-20

Applicant: Applied Materials, Inc.

Inventor： Amikam Sade ,  Michael Kutney

IPC: H01L21/66 ,  G01N21/41 ,  G01N21/95

CPC classification number: H01L22/12 ,  G01N21/41 ,  G01N21/9501

Abstract: A method includes determining a plurality of measurement targets of a substrate. The substrate includes a plurality of structures. Each measurement target is associated with a structure of the plurality of structures. The method further includes operating one or more motors to cause motion of a substrate support to dispose a first measurement target within a field of view of a measurement instrument. The method further includes causing the measurement instrument to take a first measurement of the first measurement target as the first measurement target passes through the field of view of the measurement instrument. The method further includes operating the one or more motors of the substrate support to dispose a second measurement target of the substrate within the field of view of the measurement instrument.

公开(公告)号：US20160013046A1

公开(公告)日：2016-01-14

申请号：US14789075

申请日：2015-07-01

Applicant: Applied Materials, Inc.

Inventor： SWAMINATHAN T. SRINIVASAN ,  Aaron Muir Hunter ,  Matthias Bauer ,  Amikam Sade

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/268

CPC classification number: H01L21/02658 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/483 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract translation: 本公开的实施例提供了用于在衬底上形成外延层的方法和装置。 将衬底暴露于脉冲激光辐射以清洁，退火和/或激活衬底的表面。 然后将衬底在自限制沉积工艺中暴露于沉积前体。 衬底可以再次暴露于脉冲激光辐射，然后在第二自限制沉积工艺中暴露于第二沉积前体。 可以根据需要重复该过程，以一次形成非常高质量的一个原子层的外延层。