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Patent Agency Ranking
公开(公告)号：US20160219719A1
公开(公告)日：2016-07-28
申请号：US14608072
申请日：2015-01-28
Applicant: Analog Devices Global
Inventor： Seamus Paul Whiston , Bernard Patrick Stenson , Michael Noel Morrissey , Michael John Flynn
CPC classification number: H03H9/462 , H01L2224/48227 , H03H9/174 , H03H9/22 , H03H2009/02165 , H03H2009/155 , H03H2009/2421
Abstract: A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.
Abstract translation: 提供一种修整组分的方法，其中保护组分免受氧化或修剪后的应力变化。 作为该方法的一部分，在组件的修整（例如，激光修整）之前，将保护性玻璃盖结合到半导体衬底的表面。 这可以保护组件在修剪后免受氧化，这可能会改变其组件的值或参数。 它还可以保护组件免受包装过程中作用在其上或与模具相邻的模具上的应力变化，这也可能改变组件的值或参数。
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公开(公告)号：US20160133701A1
公开(公告)日：2016-05-12
申请号：US14539593
申请日：2014-11-12
Applicant: ANALOG DEVICES GLOBAL
Inventor： Breandan Pol Og O hAnnaidh , Seamus Paul Whiston , Edward John Coyne , William Allan Lane , Donal Peter McAuliffe
IPC: H01L29/06 , H01L29/423 , H01L29/417 , H01L29/78 , H01L29/66
CPC classification number: H01L29/0692 , H01L29/0847 , H01L29/402 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/66568 , H01L29/78 , H01L29/7835 , H01L29/808
Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.
Abstract translation: 提供一种晶体管，其中细长的漏极区域具有形成在晶体管的部分中的端部，其晶体管结构的特征已被修改或省略。 这些结构减少了漏极端部处的电流或电场梯度。 这提供了具有改善的导通状态击穿性能而不牺牲关断状态击穿性能的晶体管。
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公开(公告)号：US20180148318A1
公开(公告)日：2018-05-31
申请号：US15362296
申请日：2016-11-28
Applicant: Analog Devices Global
Inventor： Michael John Flynn , Paul Lambkin , Seamus Paul Whiston , Christina B. McLoughlin
Abstract: Suspended microelectromechanical systems (MEMS) devices including a stack of one or more materials over a cavity in a substrate are described. The suspended MEMS device may be formed by forming the stack, which may include one or more electrode layers and an active layer, over the substrate and removing part of the substrate underneath the stack to form the cavity. The resulting suspended MEMS device may include one or more channels that extend from a surface of the device to the cavity and the one or more channels have sidewalls with a spacer material. The cavity may have rounded corners and may extend beyond the one or more channels to form one or more undercut regions. The manner of fabrication may allow for forming the stack layers with a high degree of planarity.
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公开(公告)号：US09887687B2
公开(公告)日：2018-02-06
申请号：US14608072
申请日：2015-01-28
Applicant: Analog Devices Global
Inventor： Seamus Paul Whiston , Bernard Patrick Stenson , Michael Noel Morrissey , Michael John Flynn
CPC classification number: H03H9/462 , H01L2224/48227 , H03H9/174 , H03H9/22 , H03H2009/02165 , H03H2009/155 , H03H2009/2421
Abstract: A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.
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公开(公告)号：US09362356B2
公开(公告)日：2016-06-07
申请号：US14539593
申请日：2014-11-12
Applicant: ANALOG DEVICES GLOBAL
Inventor： Breandan Pol Og O hAnnaidh , Seamus Paul Whiston , Edward John Coyne , William Allan Lane , Donal Peter McAuliffe
IPC: H01L29/66 , H01L29/06 , H01L29/78 , H01L29/417 , H01L29/423
CPC classification number: H01L29/0692 , H01L29/0847 , H01L29/402 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/66568 , H01L29/78 , H01L29/7835 , H01L29/808
Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.
Abstract translation: 提供一种晶体管，其中细长的漏极区域具有形成在晶体管的部分中的端部，其晶体管结构的特征已被修改或省略。 这些结构减少了漏极端部处的电流或电场梯度。 这提供了具有改善的导通状态击穿性能而不牺牲关断状态击穿性能的晶体管。
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