公开(公告)号：US10730743B2

公开(公告)日：2020-08-04

申请号：US16159477

申请日：2018-10-12

Applicant: Analog Devices Global Unlimited Company

Inventor： Oliver J. Kierse ,  Rigan McGeehan ,  Alfonso Berduque ,  Donal Peter McAuliffe ,  Raymond J. Speer ,  Brendan Cawley ,  Brian J. Coffey ,  Gerald Blaney

IPC: H01L23/02 ,  B81B7/00 ,  G01N33/00 ,  H01L23/00 ,  H01L23/31 ,  G01N27/404 ,  H01L25/065 ,  B81C1/00 ,  H01L23/055 ,  H01L23/24 ,  H01L23/49 ,  H01L23/498 ,  H01L23/50

Abstract: A gas sensor package is disclosed. The gas sensor package can include a housing defining a first chamber and a second chamber. An electrolyte can be provided in the first chamber. A gas inlet can provide fluid communication between the second chamber and the outside environs. The gas inlet can be configured to permit gas to enter the second chamber from the outside environs. An integrated device die can be mounted to the housing. The integrated device die can comprise a sensing element configured to detect the gas. The integrated device die can have a first side exposed to the first chamber and a second side exposed to the second chamber, with the first side opposite the second side.

公开(公告)号：US09362356B2

公开(公告)日：2016-06-07

申请号：US14539593

申请日：2014-11-12

Applicant: ANALOG DEVICES GLOBAL

Inventor： Breandan Pol Og O hAnnaidh ,  Seamus Paul Whiston ,  Edward John Coyne ,  William Allan Lane ,  Donal Peter McAuliffe

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/0692 ,  H01L29/0847 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66568 ,  H01L29/78 ,  H01L29/7835 ,  H01L29/808

Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.

Abstract translation: 提供一种晶体管，其中细长的漏极区域具有形成在晶体管的部分中的端部，其晶体管结构的特征已被修改或省略。 这些结构减少了漏极端部处的电流或电场梯度。 这提供了具有改善的导通状态击穿性能而不牺牲关断状态击穿性能的晶体管。

公开(公告)号：US20190135614A1

公开(公告)日：2019-05-09

申请号：US16159477

申请日：2018-10-12

Applicant: Analog Devices Global Unlimited Company

Inventor： Oliver J. Kierse ,  Rigan McGeehan ,  Alfonso Berduque ,  Donal Peter McAuliffe ,  Raymond J. Speer ,  Brendan Cawley ,  Brian J. Coffey ,  Gerald Blaney

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/055 ,  H01L23/498 ,  H01L23/24 ,  H01L23/49 ,  H01L23/50 ,  H01L23/00 ,  G01N33/00

Abstract: A gas sensor package is disclosed. The gas sensor package can include a housing defining a first chamber and a second chamber. An electrolyte can be provided in the first chamber. A gas inlet can provide fluid communication between the second chamber and the outside environs. The gas inlet can be configured to permit gas to enter the second chamber from the outside environs. An integrated device die can be mounted to the housing. The integrated device die can comprise a sensing element configured to detect the gas. The integrated device die can have a first side exposed to the first chamber and a second side exposed to the second chamber, with the first side opposite the second side.

公开(公告)号：US20160133701A1

公开(公告)日：2016-05-12

申请号：US14539593

申请日：2014-11-12

Applicant: ANALOG DEVICES GLOBAL

Inventor： Breandan Pol Og O hAnnaidh ,  Seamus Paul Whiston ,  Edward John Coyne ,  William Allan Lane ,  Donal Peter McAuliffe

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0692 ,  H01L29/0847 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66568 ,  H01L29/78 ,  H01L29/7835 ,  H01L29/808

Abstract: A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.

Abstract translation: 提供一种晶体管，其中细长的漏极区域具有形成在晶体管的部分中的端部，其晶体管结构的特征已被修改或省略。 这些结构减少了漏极端部处的电流或电场梯度。 这提供了具有改善的导通状态击穿性能而不牺牲关断状态击穿性能的晶体管。