公开(公告)号：US20130221504A1

公开(公告)日：2013-08-29

申请号：US13861027

申请日：2013-04-11

Applicant: ABB Research Ltd

Inventor： Nicola SCHULZ ,  Samuel HARTMANN

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49517 ,  H01L23/24 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/80 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01013 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19107 ,  H05K1/11 ,  H05K3/328 ,  H05K2201/09745 ,  H05K2203/049 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An exemplary semiconductor module includes a substrate formed of a ceramic insulator, and at least one metallic layer formed on the substrate. The metallic layer includes a deepening for placing and fixing a contact element. The contact element is at least partially “L”-shaped and includes a first arm for fixing the contact element at the deepening, and a second arm for interconnecting the contact element with an external device. The deepening has a horizontal dimension which is about ≦0.5 mm bigger than the horizontal dimension of the contact element.

Abstract translation: 示例性的半导体模块包括由陶瓷绝缘体形成的衬底和形成在衬底上的至少一个金属层。 金属层包括用于放置和固定接触元件的加深。 接触元件至少部分为“L”形，并且包括用于在接触元件加深处固定的第一臂和用于将接触元件与外部设备互连的第二臂。 加深度具有比接触元件的水平尺寸大约0.5mm的水平尺寸。