-
公开(公告)号:US08853833B2
公开(公告)日:2014-10-07
申请号:US13159203
申请日:2011-06-13
Applicant: Vladimir Mikhalev , Michael Smith , Henry J. Fulford , Puneet Sharma , Zia A. Shafi
Inventor: Vladimir Mikhalev , Michael Smith , Henry J. Fulford , Puneet Sharma , Zia A. Shafi
IPC: H01L23/552 , H01L23/522
CPC classification number: H01L23/552 , H01L23/5225 , H01L23/5226 , H01L23/53271 , H01L27/088 , H01L29/402 , H01L29/404 , H01L29/45 , H01L29/7833 , H01L2924/0002 , H03K17/161 , H03K17/162 , H01L2924/00
Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.
Abstract translation: 描述半导体器件以及包括它们的方法和系统。 一种这样的器件包括在半导体材料中的扩散区域,耦合到扩散区域的端子和耦合到端子并且从端子在扩散区域上延伸以屏蔽扩散区域的场板。 还描述了另外的实施例。
-
公开(公告)号:US20120313691A1
公开(公告)日:2012-12-13
申请号:US13159203
申请日:2011-06-13
Applicant: Vladimir Mikhalev , Michael Smith , Henry J. Fulford , Puneet Sharma , Zia A. Shafi
Inventor: Vladimir Mikhalev , Michael Smith , Henry J. Fulford , Puneet Sharma , Zia A. Shafi
IPC: H03K3/01 , H01L27/04 , H01L23/552
CPC classification number: H01L23/552 , H01L23/5225 , H01L23/5226 , H01L23/53271 , H01L27/088 , H01L29/402 , H01L29/404 , H01L29/45 , H01L29/7833 , H01L2924/0002 , H03K17/161 , H03K17/162 , H01L2924/00
Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.
Abstract translation: 描述半导体器件以及包括它们的方法和系统。 一种这样的器件包括在半导体材料中的扩散区域,耦合到扩散区域的端子和耦合到端子并且从端子在扩散区域上延伸以屏蔽扩散区域的场板。 还描述了另外的实施例。
-