公开(公告)号：US08373155B2

公开(公告)日：2013-02-12

申请号：US12534421

申请日：2009-08-03

申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

IPC分类号： H01L31/09

CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

公开(公告)号：US20100032552A1

公开(公告)日：2010-02-11

申请号：US12535263

申请日：2009-08-04

申请人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

发明人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

IPC分类号： G01J1/42 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/0256 ,  H01L33/00

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/101 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30

摘要： An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

摘要翻译： 一种光学半导体器件包括形成在半导体衬底上的下电极层，形成在下电极层26上的红外吸收层和形成在红外吸收层36上的上电极层38.红外吸收层包括具有 尺寸在堆叠方向不同，并且对于与偏振方向不同的波长的红外辐射敏感。

公开(公告)号：US07399988B2

公开(公告)日：2008-07-15

申请号：US11581583

申请日：2006-10-17

申请人： Yusuke Matsukura

发明人： Yusuke Matsukura

IPC分类号： H01L29/06

CPC分类号： H01L31/0352 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/035236 ,  H01L31/101 ,  Y10S977/774

摘要： A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure including embedding layers and a quantum well layer whose band gap is smaller than those of the embedding layers is formed at a location downstream of the quantum dot structure in the direction of flow of electrons which flow perpendicularly to the quantum dot structure during operation of the photodetecting device. This reduces the temperature dependence of the potential barrier of a photodetecting section, which has to be overcome by electrons, whereby it is possible to lower the potential barrier of the embedding layers at high temperature.

摘要翻译： 能够在宽温度范围内以高灵敏度进行光检测的光检测装置。 形成包括嵌入层和嵌入层嵌入的量子点的量子点结构。 包括嵌入层和量子阱层的量子阱结构，其带隙小于嵌入层的量子阱层，形成在量子点结构的下游位于垂直于量子点结构的电子流动方向的位置 光电检测装置的运行。 这就降低了必须由电子克服的光电检测部分的势垒的温度依赖性，从而可以降低埋入层在高温下的势垒。

公开(公告)号：US08368045B2

公开(公告)日：2013-02-05

申请号：US12010584

申请日：2008-01-28

申请人： Yusuke Matsukura

发明人： Yusuke Matsukura

IPC分类号： H01L29/72

CPC分类号： H01L31/035218 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544

摘要： The infrared photodetector includes a contact layer formed over a semiconductor substrate 10, a quantum dot stack 24 formed on the contact layer 12 and including intermediate layers 22 and quantum dots 20 which are alternately stacked, and a contact layer 26 formed on the quantum dot stack 24. One of the plurality of intermediate layers, which is in contact with the contact layer, has an n-type impurity doped region 16 formed on a side nearer the interface with the contact layer 12.

摘要翻译： 红外光检测器包括形成在半导体衬底10上的接触层，形成在接触层12上并包括交替层叠的中间层22和量子点20的量子点堆叠24和形成在量子点堆叠上的接触层26 与接触层接触的多个中间层中的一个具有形成在更接近接触层12的一侧的一侧的n型杂质掺杂区域16。

公开(公告)号：US20100289061A1

公开(公告)日：2010-11-18

申请号：US12010584

申请日：2008-01-28

申请人： Yusuke Matsukura

发明人： Yusuke Matsukura

IPC分类号： H01L31/0352 ,  H01L31/0256

CPC分类号： H01L31/035218 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544

摘要： The infrared photodetector includes a contact layer formed over a semiconductor substrate 10, a quantum dot stack 24 formed on the contact layer 12 and including intermediate layers 22 and quantum dots 20 which are alternately stacked, and a contact layer 26 formed on the quantum dot stack 24. One of the plurality of intermediate layers, which is in contact with the contact layer, has an n-type impurity doped region 16 formed on a side nearer the interface with the contact layer 12.

摘要翻译： 红外光检测器包括形成在半导体衬底10上的接触层，形成在接触层12上并包括交替层叠的中间层22和量子点20的量子点堆叠24和形成在量子点堆叠上的接触层26 与接触层接触的多个中间层中的一个具有形成在更接近接触层12的一侧的一侧的n型杂质掺杂区域16。

公开(公告)号：US20100032652A1

公开(公告)日：2010-02-11

申请号：US12534421

申请日：2009-08-03

申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

IPC分类号： H01L31/101 ,  H01L31/0304

CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

公开(公告)号：US20070131923A1

公开(公告)日：2007-06-14

申请号：US11447014

申请日：2006-06-06

申请人： Yasuhito Uchiyama ,  Toshio Fujii ,  Nobuyuki Kajihara ,  Hironori Nishino ,  Yusuke Matsukura

发明人： Yasuhito Uchiyama ,  Toshio Fujii ,  Nobuyuki Kajihara ,  Hironori Nishino ,  Yusuke Matsukura

IPC分类号： H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/774 ,  Y10S977/932

摘要： At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked.

摘要翻译： 至少一个或多个具有量子阱结构的暗电流降低层设置在层叠有量子点层的红外线检测部的层叠方向的端部。

公开(公告)号：US5818078A

公开(公告)日：1998-10-06

申请号：US517041

申请日：1995-08-21

申请人： Kozo Makiyama ,  Masahiko Takikawa ,  Satoru Asai ,  Yusuke Matsukura ,  Toshihide Kikkawa

发明人： Kozo Makiyama ,  Masahiko Takikawa ,  Satoru Asai ,  Yusuke Matsukura ,  Toshihide Kikkawa

IPC分类号： H01L21/331 ,  H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/737 ,  H01L29/778 ,  H01L29/80 ,  H01L29/90 ,  H01L31/112

CPC分类号： H01L29/66318 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/41725 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7371 ,  H01L29/7783 ,  H01L29/802

摘要： A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.

公开(公告)号：US07473922B2

公开(公告)日：2009-01-06

申请号：US11447014

申请日：2006-06-06

申请人： Yasuhito Uchiyama ,  Toshio Fujii ,  Nobuyuki Kajihara ,  Hironori Nishino ,  Yusuke Matsukura

发明人： Yasuhito Uchiyama ,  Toshio Fujii ,  Nobuyuki Kajihara ,  Hironori Nishino ,  Yusuke Matsukura

IPC分类号： H01L29/06

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/774 ,  Y10S977/932

摘要： At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked.

摘要翻译： 至少一个或多个具有量子阱结构的暗电流降低层设置在层叠有量子点层的红外线检测部的层叠方向的端部。

公开(公告)号：US08395106B2

公开(公告)日：2013-03-12

申请号：US12535263

申请日：2009-08-04

申请人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

发明人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

IPC分类号： G02F1/01

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/101 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30

摘要： An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

摘要翻译： 一种光学半导体器件包括形成在半导体衬底上的下电极层，形成在下电极层26上的红外吸收层和形成在红外吸收层36上的上电极层38.红外吸收层包括具有 尺寸在堆叠方向不同，并且对于与偏振方向不同的波长的红外辐射敏感。