摘要:
An air-conditioning control device includes a conversion definition information storage unit, an air-conditioning control computation unit, and a gateway unit. The conversion definition information storage unit preliminarily stores conversion definition information for converting air-conditioning control original data acquired from an external air-conditioning facility into computational data for performing an air-conditioning control computation or conversion definition information for converting air-conditioning control computation resultant data acquired as a result of the air-conditioning control computation into air-conditioning control data used for air-conditioning control at the air-conditioning facility. The air-conditioning control computation unit performs the air-conditioning control computation based on the computational data, and outputs the air-conditioning control computation resultant data. The gateway unit refers to the conversion definition information to convert the air-conditioning control original data into the computational data or to convert the air-conditioning control computation resultant data into the air-conditioning control data.
摘要:
A digital circuit portion (6) and an analog circuit portion (7) are formed in a surface portion of a semiconductor substrate (4). A via (20) is formed in a region between the digital circuit portion (6) and the analog circuit portion (7). The via (20) extends through the semiconductor substrate (4) from a front surface to a back surface thereof, and is made of a dielectric (2) having its surface covered by a metal (1). The metal (1) is grounded. Signal interference between the analog circuit portion (6) and the digital circuit portion (7) is reduced by the via (20).
摘要:
The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10·cm and lower than 1 k·cm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices.
摘要:
An inductor element is formed in a spiral shape so as to have a plurality of windings which cross each other three-dimensionally at least in one intersection on a substrate. Each of the plurality of windings is formed by a first wiring formed on the substrate with a first insulating film interposed therebetween and a second wiring formed on the first wiring with a second insulating film interposed therebetween. The first wiring and the second wiring are electrically connected to each other in a region other than the intersection of the plurality of windings through an opening formed in the second insulating film. A lower wire segment in the intersection is formed only by the first wiring by separating the second wiring in the intersection. An upper wire segment in the intersection is formed only by the second wiring by separating the first wiring in the intersection.
摘要:
A high-Q inductor for high frequency, having a plurality of inductor elements formed in a plurality of IC wiring layers with a connection formed therebetween. The directions of the magnetic fields generated by the respective inductor elements are substantially the same. With this construction, the section of the inductor is increased reducing the serial resistance component and an influence of a skin effect in a high-frequency range is eliminated increasing the Q value.
摘要:
A frequency synthesizer is provided with a prescaler 2 and a counter 3, which output a signal having a frequency generated by frequency-dividing an output signal of a VCO 1; a reference frequency divider 5 for frequency-dividing a frequency of a reference signal of a reference signal source 4; a frequency adjusting meas 9 operated in such that a frequency error between the output signal of the counter 5 and the output signal of the reference frequency divider 5 is detected, and in response to this detection result, such a signal is outputted by which either a capacitor value or an inductor value employed in a resonant circuit of the VCO 1 is switched; and also a bias control means for applying an arbitrary voltage V1 to a control voltage terminal of the VCO 1 so as to bring an output signal of a charge pump 7 into a high impedance state when the frequency adjusting means 9 is operated. Since the resonant frequency of the resonant circuit is changed in response to an actual oscillation frequency of the VCO 1, the frequency synthesizer can be phase-locked at a desirable frequency. Also, since the VCO can be manufactured in the IC form, the compact VCO can be made in low cost.
摘要:
A humidity estimation device connected with an air-conditioner includes a charge airflow rate estimation (CARE) unit, a charge air absolute humidity estimation (CAAHE) unit, an indoor generated vapor amount estimation (IGVAE) unit, and an indoor absolute humidity estimation (IAHE) unit. The CARE unit calculates an estimated charge airflow rate (ECAR) of the air-conditioner based on operation control information of the charge fan and a preset fan differential pressure. The CAAHE unit calculates an estimated charge air absolute humidity (ECAAH) of the air-conditioner based on a charge air temperature and a preset charge air relative humidity. The IGVAE unit calculates an estimated indoor generated vapor amount (EIGVA) based on an indoor temperature, the number of persons in the room and activity index values of the persons. The IAHE unit calculates an estimated absolute humidity in the room based on the ECAR, the ECAAH and the EIGVA.
摘要:
The present invention provides a differential voltage control oscillator including: a parallel resonance circuit in which an inductor circuit, a variable capacitance circuit, and a radio-frequency switching circuit are connected in parallel together; and a negative resistance circuit connected in parallel with the parallel resonance circuit. The radio-frequency switching circuit includes: a first switching element; a first capacitive element; a second switching element; a second capacitive element; a control voltage terminal for supplying a common control voltage to the first and second switching control terminals, the control voltage terminal being connected to a virtual ground point for a differential signal generated in the parallel resonance circuit; a first radio-frequency signal reduction section connected between the control voltage terminal and the first switching element; and a second radio-frequency signal reduction section connected between the control voltage terminal and the second switching element.
摘要:
The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10 Ωcm and lower than 1 kΩcm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices.
摘要:
A semiconductor differential circuit comprising a semiconductor substrate, a first semiconductor device on the semiconductor substrate having a gate electrode for having one of differential signals conveyed thereto and a drain electrode for outputting one of the differential signals controlled by the gate electrode, a second semiconductor device formed on the semiconductor substrate having a gate electrode for having the other of the differential signals conveyed thereto and a drain electrode for outputting the other of the differential signals controlled by the gate electrode, and wherein the drain electrode and drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which the drain electrode is grounded via a predetermined resistance, and the drain electrode is grounded via the predetermined resistance.