Manufacture of ultra-clean surfaces by selective
    1.
    发明申请
    Manufacture of ultra-clean surfaces by selective 审中-公开
    通过选择制造超洁净表面

    公开(公告)号:US20060060213A1

    公开(公告)日:2006-03-23

    申请号:US11128215

    申请日:2005-05-13

    CPC classification number: H01L21/02043 B08B7/0042 H01L21/67051

    Abstract: A method and apparatus for removing surface impurities from a surface of a material, particularly silicon wafers, includes identifying the location of at least one impurity particle on a surface of the material and applying a liquid to the surface in the vicinity of the at least one impurity particle. The liquid is explosively evaporated to remove the surface particle as part of the evaporation of the liquid. The apparatus can include a source of humidified gas for the liquid and a laser apparatus to provide the heat for liquid evaporation.

    Abstract translation: 一种用于从材料表面特别是硅晶片表面去除表面杂质的方法和装置包括:鉴定至少一种杂质颗粒在该材料表面上的位置,并向该表面附近的至少一个 杂质颗粒。 液体被爆炸性蒸发以除去作为液体蒸发的一部分的表面颗粒。 该装置可以包括用于液体的加湿气体源和用于提供用于液体蒸发的热量的激光装置。

    Process for measuring overlay misregistration during semiconductor wafer
fabrication
    2.
    发明授权
    Process for measuring overlay misregistration during semiconductor wafer fabrication 失效
    半导体晶片制造过程中测量重叠重合的过程

    公开(公告)号:US5438413A

    公开(公告)日:1995-08-01

    申请号:US25435

    申请日:1993-03-03

    CPC classification number: G03F7/70633

    Abstract: A process for measuring overlay misregistration during semiconductor wafer fabrication including the use of an interferometric microscope in combination with a camera, a wafer transport stage, and data processing electronics to form an inspection system which can utilize either broadband or narrowband light, and large or small numerical aperture (NA) to develop a series of interference images taken at different Z (vertical) planes relative to the surface under investigation or P (pathlength) positions relative to interferometer arm difference. The data in these planes is then used to calculate the magnitude and phase of the mutual coherence between the object wave and the reference wave for each pixel in the image planes, and synthetic images are formed, the brightness of which is proportional to either the complex magnitude (the Magnitude Contrast Image or MCI) or the phase of the mutual coherence as the optical pathlength (the Phase Contrast Image or PCI) is varied. The difference between synthetic images relating to target attribute position and bullet attribute position are then used as a means of detecting misregistration between the processing layer including the bullet attribute and the processing layer including the target attribute.

    Abstract translation: 一种用于测量半导体晶片制造期间的重叠配准的方法,包括使用干涉式显微镜与照相机,晶片传送台和数据处理电子装置组合,形成可利用宽带或窄带光以及大或小的光检测系统 数值孔径(NA)以相对于正在研究的表面或相对于干涉仪臂差的P(路径长度)位置在不同的Z(垂直)平面处拍摄的一系列干涉图像。 然后使用这些平面中的数据来计算像平面中每个像素的对象波和参考波之间的相互相干的幅度和相位,并且形成合成图像,其亮度与复合物 幅度(大小对比度图像或MCI)或作为光程长度(相位对比图像或PCI)的相互相干的相位发生变化。 然后,将与目标属性位置和子弹属性位置相关的合成图像之间的差异用作检测包括子弹属性的处理层和包括目标属性的处理层之间的重合失调的手段。

    HIGH ELECTRON ENERGY BASED OVERLAY ERROR MEASUREMENT METHODS AND SYSTEMS
    3.
    发明申请
    HIGH ELECTRON ENERGY BASED OVERLAY ERROR MEASUREMENT METHODS AND SYSTEMS 有权
    基于高电子能量的覆盖误差测量方法和系统

    公开(公告)号:US20120292502A1

    公开(公告)日:2012-11-22

    申请号:US13111838

    申请日:2011-05-19

    CPC classification number: G01N23/2251 G01N2223/61 G01N2223/611

    Abstract: A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.

    Abstract translation: 提供了一种方法,系统和计算机可读介质。 该方法可以包括获得或接收表示被检查对象的第一层的第一区域的第一区域信息; 其中被检查物体还包括包括第二区域的第二层; 其中所述第二层被埋在所述第一层下面; 引导一次电子束的电子与第一区域相互作用; 引导所述一次电子束的电子与所述第二区域相互作用; 产生响应于从第一和第二区域中的至少一个散射或反射的电子的检测信号; 以及基于所述检测信号和所述第一区域信息,确定所述第一区域的至少一个特征与所述第二区域的至少一个特征之间的至少一个空间关系。

    Contaminant removal by laser-accelerated fluid
    4.
    发明授权
    Contaminant removal by laser-accelerated fluid 失效
    通过激光加速流体去除污染物

    公开(公告)号:US06908567B2

    公开(公告)日:2005-06-21

    申请号:US10209506

    申请日:2002-07-30

    Applicant: Yoram Uziel

    Inventor: Yoram Uziel

    Abstract: A method for removing a particle from a substrate includes forming a layer of a fluid on a surface of an optical element and positioning the optical element in proximity to a location of the particle on the substrate. A pulse of electromagnetic radiation is directed to impinge on the surface of the optical element so as to induce explosive evaporation of the fluid thereon, whereby a pressure wave is emitted toward the location of the particle.

    Abstract translation: 从基板去除颗粒的方法包括在光学元件的表面上形成流体层,并将光学元件定位在基板上的颗粒位置附近。 电磁辐射脉冲被引向冲击在光学元件的表面上,以便在其上引起流体的爆炸性蒸发,从而向颗粒的位置发射压力波。

    Buffer station for wafer backside cleaning and inspection
    5.
    发明授权
    Buffer station for wafer backside cleaning and inspection 失效
    用于晶片背面清洁和检查的缓冲站

    公开(公告)号:US06900135B2

    公开(公告)日:2005-05-31

    申请号:US10330810

    申请日:2002-12-27

    CPC classification number: H01L21/67253 H01L21/67051

    Abstract: A wafer processing station includes an air gap chuck and a light emitter/collector assembly configured to gather light when scattered or reflected by contaminants on the wafer. The light emitter/collector assembly is driven by an actuator so that it passes across a backside surface of a wafer when supported within the chuck during wafer inspection. The wafer processing station may also include a cleaning module configured to clean the backside surface of the wafer when contaminants are discovered during wafer inspection. A computer system may be coupled to receive one or more signals from the light emitter/collector assembly that are indicative of contaminants on the backside surface of the wafer and to provide one or more control signals to the cleaning module in accordance therewith. The cleaning module may be used independently of the light emitter/collector assembly and vice-versa.

    Abstract translation: 晶片处理站包括气隙卡盘和发光体/集电器组件,其配置成当散射或在晶片上被污染物反射时收集光。 光发射器/集电器组件由致动器驱动,使得当在晶片检查期间支撑在卡盘内时,其穿过晶片的背面。 晶片处理站还可以包括清洁模块,该清洁模块被配置为当在晶片检查期间发现污染物时清洁晶片的背面。 计算机系统可以被耦合以从光发射器/收集器组件接收指示晶片的背面上的污染物的一个或多个信号,并根据其提供一个或多个控制信号给清洁模块。 清洁模块可以独立于光发射器/收集器组件使用,反之亦然。

    Autofocusing apparatus and method for high resolution microscope system
    6.
    发明授权
    Autofocusing apparatus and method for high resolution microscope system 失效
    高分辨率显微镜系统的自动对焦装置和方法

    公开(公告)号:US06172349B2

    公开(公告)日:2001-01-09

    申请号:US08835216

    申请日:1997-03-31

    CPC classification number: G01B9/04 G02B21/244

    Abstract: A method and apparatus for automatically focusing a high resolution microscope, wherein during setup the operator designates areas within each field of view where a measurement will be taken, and for each area of interest translates the microscope along its optical axis (Z-axis) while measuring the image intensities at discrete subareas within the area of interest. These image intensities are then evaluated, and those having the greatest signal-to-noise ratio and occurring at a common point along the Z-axis will be selected, and the corresponding subareas identified. During subsequent inspections of the area of interest, only light reflected from the identified subareas will be used to focus the microscope. The invention has application in both conventional microscopy and interferometry.

    Abstract translation: 一种用于自动对焦高分辨率显微镜的方法和装置,其中在设置期间,操作者指定将在每个视野内进行测量的区域,并且对于每个感兴趣的区域,显微镜沿其光轴(Z轴)转换,同时 测量感兴趣区域内离散子区域的图像强度。 然后评估这些图像强度,并且将选择具有最大信噪比并且沿着Z轴在公共点处发生的图像强度,并且识别相应的子区域。 在随后对感兴趣的区域进行检查时,只有从识别的子区域反射的光线才能用于对显微镜进行对焦。 本发明可应用于常规显微镜和干涉测量。

    High electron energy based overlay error measurement methods and systems
    7.
    发明授权
    High electron energy based overlay error measurement methods and systems 有权
    基于高电子能量的覆盖误差测量方法和系统

    公开(公告)号:US09046475B2

    公开(公告)日:2015-06-02

    申请号:US13111838

    申请日:2011-05-19

    CPC classification number: G01N23/2251 G01N2223/61 G01N2223/611

    Abstract: A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.

    Abstract translation: 提供了一种方法,系统和计算机可读介质。 该方法可以包括获得或接收表示被检查对象的第一层的第一区域的第一区域信息; 其中被检查物体还包括包括第二区域的第二层; 其中所述第二层被埋在所述第一层下面; 引导一次电子束的电子与第一区域相互作用; 引导所述一次电子束的电子与所述第二区域相互作用; 产生响应于从第一和第二区域中的至少一个散射或反射的电子的检测信号; 以及基于所述检测信号和所述第一区域信息,确定所述第一区域的至少一个特征与所述第二区域的至少一个特征之间的至少一个空间关系。

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