公开(公告)号：US07981591B2

公开(公告)日：2011-07-19

申请号：US12079524

申请日：2008-03-27

Applicant: Yabo Li ,  Kechang Song ,  Nicholas John Visovsky ,  Chung-En Zah

Inventor： Yabo Li ,  Kechang Song ,  Nicholas John Visovsky ,  Chung-En Zah

IPC: G03F7/26

CPC classification number: G03F7/0005 ,  G02B6/124 ,  G02B6/136 ,  H01S5/12

Abstract: Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.

Abstract translation: 在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层 层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓 光栅层。 在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。 该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

公开(公告)号：US20090246707A1

公开(公告)日：2009-10-01

申请号：US12079524

申请日：2008-03-27

Applicant: Yabo Li ,  Kechang Song ,  Nicholas John Visovsky ,  Chung-En Zah

Inventor： Yabo Li ,  Kechang Song ,  Nicholas John Visovsky ,  Chung-En Zah

IPC: G03F7/00

CPC classification number: G03F7/0005 ,  G02B6/124 ,  G02B6/136 ,  H01S5/12

Abstract: Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.

Abstract translation: 在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层 层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓 光栅层。 在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。 该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

公开(公告)号：US20090129501A1

公开(公告)日：2009-05-21

申请号：US11990650

申请日：2005-08-19

Applicant: Neelesh B. Mehta ,  Yabo Li ,  Andreas F. Molisch ,  Jinyun Zhang

Inventor： Neelesh B. Mehta ,  Yabo Li ,  Andreas F. Molisch ,  Jinyun Zhang

IPC: H04L27/00

CPC classification number: H04B7/061

Abstract: A method is provided for receiving data at a receiver via a communication channel from a transmitter having at least two transmitter antennas, the method including: receiving (S204) a codebook including an assignment of at least two respective codewords to the at least two transmitter antennas, the assignment being based at least in part on a characteristic of the communication channel; detecting a state of the communication channel by which the receiver can communicate with the transmitter; selecting (S206) at least one desired transmitter antenna from the at least two antennas based at least in part on the detected state of the communication channel; transmitting (S208) to the transmitter a codeword corresponding to the at least one desired transmitter antenna; and receiving (S210) data at the receiver transmitted by the transmitter.

Abstract translation: 提供了一种用于经由来自具有至少两个发射机天线的发射机的通信信道在接收机处接收数据的方法，所述方法包括：接收（S204）包括至少两个相应码字的分配的码本到所述至少两个发射机天线 所述分配至少部分地基于所述通信信道的特性; 检测接收机可以与发射机通信的通信信道的状态; 至少部分地基于所检测到的通信信道的状态，从所述至少两个天线中选择（S206）至少一个期望的发射机天线; 向所述发射机发送对应于所述至少一个所需发射机天线的码字（S208）; 以及在由发射机发送的接收机处接收（S210）数据。

公开(公告)号：US07723139B2

公开(公告)日：2010-05-25

申请号：US11906247

申请日：2007-10-01

Applicant: Yabo Li ,  Kechang Song ,  Chung-En Zah

Inventor： Yabo Li ,  Kechang Song ,  Chung-En Zah

IPC: H01L21/00

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01L21/02546 ,  H01L21/02664 ,  H01L29/205 ,  H01S5/3414

Abstract: Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer and the barrier layers of the upper epitaxial layer and the lower epitaxial layer.

Abstract translation: 量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层的晶片，每个外延层各自包括势垒层，以及设置在上外延层和下外延层之间的量子阱层，在该外延层上施加至少一个牺牲层 并且通过在牺牲层的一部分上施加QWI增强层来形成QWI增强区域和QWI抑制区域，其中QWI增强层下面的部分是QWI增强区域，而另一部分是QWI增强区域 抑制区域。 该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层，并且在足以引起量子阱层与上部外延层的势垒层之间的原子相互扩散的温度下退火， 较低的外延层。

公开(公告)号：US20090086784A1

公开(公告)日：2009-04-02

申请号：US11906247

申请日：2007-10-01

Applicant: Yabo Li ,  Kechang Song ,  Chung-En Zah

Inventor： Yabo Li ,  Kechang Song ,  Chung-En Zah

IPC: H01S5/125 ,  H01L21/225

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01L21/02546 ,  H01L21/02664 ,  H01L29/205 ,  H01S5/3414

Abstract: Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer and the barrier layers of the upper epitaxial layer and the lower epitaxial layer.

Abstract translation: 量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层的晶片，每个外延层各自包括势垒层，以及设置在上外延层和下外延层之间的量子阱层，在该外延层上施加至少一个牺牲层 并且通过在牺牲层的一部分上施加QWI增强层来形成QWI增强区域和QWI抑制区域，其中QWI增强层下面的部分是QWI增强区域，而另一部分是QWI增强区域 抑制区域。 该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层，并且在足以引起量子阱层与上部外延层的势垒层之间的原子相互扩散的温度下退火， 较低的外延层。