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    Etching radical controlled gas chopped deep reactive ion etching
    2.
    发明授权
    Etching radical controlled gas chopped deep reactive ion etching 有权
    蚀刻自由基控制气体切碎深反应离子蚀刻

    公开(公告)号：US08546264B2

    公开(公告)日：2013-10-01

    申请号：US11421958

    申请日：2006-06-02

    申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

    发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/30655

    摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

    摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制通过仔细控制氟化物存在与慢化剂气体如CH4，并使用CF2源控制钝化速率和化学计量来实现。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。

    ETCHING RADICAL CONTROLLED GAS CHOPPED DEEP REACTIVE ION ETCHING
    5.
    发明申请
    ETCHING RADICAL CONTROLLED GAS CHOPPED DEEP REACTIVE ION ETCHING 有权
    蚀刻放射性气体控制气体切割深度反应离子蚀刻

    公开(公告)号：US20070015371A1

    公开(公告)日：2007-01-18

    申请号：US11421958

    申请日：2006-06-02

    申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

    发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

    IPC分类号： C03C25/68 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22

    CPC分类号： H01L21/30655

    摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

    摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制是通过小心地控制氟化物存在与慢化剂气体如CH 4，并使用CF 2 SO 2源控制钝化速率和化学计量来实现的。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。