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公开(公告)号：US08129203B2
公开(公告)日：2012-03-06
申请号：US12636539
申请日：2009-12-11
Applicant: Lan Fang Chang , Wei-Ming You
Inventor： Lan Fang Chang , Wei-Ming You
IPC: H01L21/66
CPC classification number: H01L21/67282 , B23K26/032 , B41M5/26 , H01L22/12 , H01L22/20 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/14 , H01L2924/00
Abstract: A method of manufacturing integrated circuits includes measuring a reflectivity value of a wafer. An optimum energy level for laser marking the wafer is determined using the reflectivity value. A laser beam having the optimum energy level is then emitted to make laser marks on the wafer.
Abstract translation: 集成电路的制造方法包括测量晶片的反射率值。 使用反射率值确定用于激光标记晶片的最佳能级。 然后发射具有最佳能级的激光束以在晶片上形成激光标记。
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公开(公告)号：US07368303B2
公开(公告)日：2008-05-06
申请号：US10969475
申请日：2004-10-20
Applicant: Wei-Ming You , Shi-Ming Wang , Cheng Wei Chen , Jian-Hua Huang , Yu-Lin Du
Inventor： Wei-Ming You , Shi-Ming Wang , Cheng Wei Chen , Jian-Hua Huang , Yu-Lin Du
CPC classification number: H01L21/67248
Abstract: A method is disclosed for a multi-zone interference correction processing for a rapid thermal processing (RTP) system. This processing allows for improved calibration/tuning of RTP systems by accounting for zone coupling. The disclosed method includes establishing baseline characteristic data and zone characteristic data, and then using the baseline and zone characteristic data to determine lamp-control parameters, such as temperature offset values, for temperature sensors of the RTP system. The baseline characteristic data includes information regarding baseline heating uniformity of an RTP system. The zone characteristic data is collected for a plurality of heating zones within the heating chamber of the RTP system, each zone being associated with a respective temperature probe. The zone characteristic data is collected based on controlled temperature sensor variations. The lamp-control parameters for temperature probes of the RTP system are then calculated based on the baseline characteristic data and the zone characteristic data.
Abstract translation: 公开了一种用于快速热处理（RTP）系统的多区域干扰校正处理的方法。 该处理允许通过考虑区域耦合来改进RTP系统的校准/调谐。 所公开的方法包括建立基线特征数据和区域特征数据，然后使用基线和区域特征数据来确定用于RTP系统的温度传感器的灯控制参数，例如温度偏移值。 基线特征数据包括关于RTP系统的基线加热均匀性的信息。 针对RTP系统的加热室内的多个加热区收集区域特征数据，每个区域与相应的温度探针相关联。 基于受控的温度传感器变化收集区域特征数据。 然后根据基线特征数据和区域特征数据计算RTP系统温度探测器的灯控制参数。
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公开(公告)号：US06777251B2
公开(公告)日：2004-08-17
申请号：US10175702
申请日：2002-06-20
Applicant: Ching Shan Lu , Fu-Su Lee , Wei-Ming You , Jih-Churng Twu , Yu-Chien Hsiao
Inventor： Ching Shan Lu , Fu-Su Lee , Wei-Ming You , Jih-Churng Twu , Yu-Chien Hsiao
IPC: H01L2166
CPC classification number: H01L21/67253 , H01L21/67098 , H01L22/20
Abstract: A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.
Abstract translation: 一种方法，包括操作注入的离子以在第一离子剂量水平下在半导体晶片中注入离子; 执行第一热波测量以获得第一热波值; 将半导体晶片放置在快速热退火炉中并操作炉子以第一速率第一时间段快速加热半导体晶片，并且旨在实现晶片温度为500℃的晶片被加热; 执行第二热波测量以获得第二热波值; 将第一热波值和第二热波值之间的差值与376.5-382.5的目标范围进行比较，并且如果差异在目标范围之外，则拒绝晶片超出可接受规范。
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公开(公告)号：US06647998B2
公开(公告)日：2003-11-18
申请号：US09885772
申请日：2001-06-20
Applicant: Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
Inventor： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
IPC: B08B310
CPC classification number: H01L21/67034 , Y10S134/902
Abstract: An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.
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公开(公告)号：US08652868B2
公开(公告)日：2014-02-18
申请号：US13410165
申请日：2012-03-01
Applicant: Yu-Shen Shih , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Kuo-Cheng Lee , Yen-Hsung Ho
Inventor： Yu-Shen Shih , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Kuo-Cheng Lee , Yen-Hsung Ho
IPC: H01L21/00
CPC classification number: H01L31/103 , H01L31/1804 , Y02E10/547
Abstract: An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.
Abstract translation: 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。
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Patent Agency Ranking
公开(公告)号：US08628998B2
公开(公告)日：2014-01-14
申请号：US13477897
申请日：2012-05-22
Applicant: Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
Inventor： Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
IPC: H01L21/00
CPC classification number: H01L27/14687 , H01L21/268 , H01L27/14636 , H01L27/1464 , H01L27/14689
Abstract: A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
Abstract translation: 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。
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公开(公告)号：US20100240155A1
公开(公告)日：2010-09-23
申请号：US12636539
申请日：2009-12-11
Applicant: Lan Fang Chang , Wei-Ming You
Inventor： Lan Fang Chang , Wei-Ming You
CPC classification number: H01L21/67282 , B23K26/032 , B41M5/26 , H01L22/12 , H01L22/20 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/14 , H01L2924/00
Abstract: A method of manufacturing integrated circuits includes measuring a reflectivity value of a wafer. An optimum energy level for laser marking the wafer is determined using the reflectivity value. A laser beam having the optimum energy level is then emitted to make laser marks on the wafer.
Abstract translation: 集成电路的制造方法包括测量晶片的反射率值。 使用反射率值确定用于激光标记晶片的最佳能级。 然后发射具有最佳能级的激光束以在晶片上形成激光标记。
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公开(公告)号：US08860101B2
公开(公告)日：2014-10-14
申请号：US13406363
申请日：2012-02-27
Applicant: Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
Inventor： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
IPC: H01L31/062
CPC classification number: H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.
Abstract translation: 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。
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公开(公告)号：US20130207220A1
公开(公告)日：2013-08-15
申请号：US13406363
申请日：2012-02-27
Applicant: Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
Inventor： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
IPC: H01L31/102 , H01L31/18
CPC classification number: H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.
Abstract translation: 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。
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公开(公告)号：US20100176306A1
公开(公告)日：2010-07-15
申请号：US12416725
申请日：2009-04-01
Applicant: Yu-Peng LIN , Wei-Ming YOU , Ruey-Yong DENG , Jiunn-Nan LIN , Sheng-Chien TUNG , Pin Chia SU
Inventor： Yu-Peng LIN , Wei-Ming YOU , Ruey-Yong DENG , Jiunn-Nan LIN , Sheng-Chien TUNG , Pin Chia SU
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/26513
Abstract: A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.
Abstract translation: 一种方法包括在离子源的电弧室中提供掺杂气体。 供给稀释剂以稀释掺杂气体。 稀释剂包含约98.5wt。 ％氙和约1.5wt。 ％氢。 使用离子源从稀释的掺杂气体产生离子束。
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