公开(公告)号：US09136094B2

公开(公告)日：2015-09-15

申请号：US14021335

申请日：2013-09-09

申请人： Jung Hyun Cho ,  Hyung Joon Kim ,  Sang Jean Jeon ,  Sang Heon Lee ,  Jeong Yun Lee ,  Kyung Yub Jeon ,  Vasily Pashkovskiy

发明人： Jung Hyun Cho ,  Hyung Joon Kim ,  Sang Jean Jeon ,  Sang Heon Lee ,  Jeong Yun Lee ,  Kyung Yub Jeon ,  Vasily Pashkovskiy

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H05H1/24

CPC分类号： H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H05H1/24

摘要： A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

摘要翻译： 一种操作等离子体处理装置的方法包括输出具有第一频率和第一占空比的第一RF功率，并输出具有比第一频率高的第二频率的第二RF功率和小于第一占空比的第二占空比 。 第一RF功率的输出和第二RF功率的输出彼此同步。

公开(公告)号：US20080061702A1

公开(公告)日：2008-03-13

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05H1/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080023653A1

公开(公告)日：2008-01-31

申请号：US11603100

申请日：2006-11-22

申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

IPC分类号： G21K5/08

CPC分类号： H01J37/321 ,  H01J37/32412

摘要： A plasma based ion implantation apparatus. The apparatus includes a first chamber in which plasma is generated, a coil antenna to generate the plasma in the first chamber, a second chamber in which ions of the plasma are implanted into a target, the second chamber having an incoming port through which the plasma is diffused from the first chamber to the second chamber, a power source to supply high voltage power to the target in the second chamber, and a grounded conductor positioned to face the target seated on the seating table. The first chamber is formed with a ring shape opening of a predetermined width at an upper periphery of the second chamber to communicate with the second chamber.

摘要翻译： 一种基于等离子体的离子注入装置。 该装置包括其中产生等离子体的第一室，用于在第一室中产生等离子体的线圈天线，其中将等离子体的离子注入到靶中的第二室，第二室具有入口，等离子体 从所述第一室扩散到所述第二室，电源，用于向所述第二室中的所述目标提供高压电力;以及接地导体，其定位成面对所述坐在所述座台上的所述目标。 第一室在第二室的上周边形成具有预定宽度的环形开口，以与第二室连通。

公开(公告)号：US20140193978A1

公开(公告)日：2014-07-10

申请号：US14021335

申请日：2013-09-09

申请人： Jung Hyun CHO ,  Hyung Joon KIM ,  Sang Jean JEON ,  Sang Heon LEE ,  Jeong Yun LEE ,  Kyung Yub JEON ,  Vasily PASHKOVSKIY

发明人： Jung Hyun CHO ,  Hyung Joon KIM ,  Sang Jean JEON ,  Sang Heon LEE ,  Jeong Yun LEE ,  Kyung Yub JEON ,  Vasily PASHKOVSKIY

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H05H1/24

摘要： A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

摘要翻译： 一种操作等离子体处理装置的方法包括输出具有第一频率和第一占空比的第一RF功率，并输出具有比第一频率高的第二频率的第二RF功率和小于第一占空比的第二占空比 。 第一RF功率的输出和第二RF功率的输出彼此同步。

公开(公告)号：US20120007503A1

公开(公告)日：2012-01-12

申请号：US13177016

申请日：2011-07-06

申请人： Hyungjoon Kim ,  Sang Jean Jeon ,  Yury Tolmachev ,  Vasily Pashkovskiy ,  Sangheon Lee ,  Yunkwang Jeon

发明人： Hyungjoon Kim ,  Sang Jean Jeon ,  Yury Tolmachev ,  Vasily Pashkovskiy ,  Sangheon Lee ,  Yunkwang Jeon

IPC分类号： H05H1/24

CPC分类号： H05H1/46 ,  H01J37/3211 ,  H05H2001/4667

摘要： At least two antenna coils are electrically connected in parallel to each other to generate uniform high density plasma, and capacitors are installed between the respective antenna coils and a ground to minimize an antenna voltage, thereby minimizing the effect of capacitive plasma coupling due to the antenna voltage.

摘要翻译： 至少两个天线线圈彼此并联电连接以产生均匀的高密度等离子体，并且电容器安装在各个天线线圈和地之间以最小化天线电压，从而最小化由天线引起的电容等离子体耦合的影响 电压。

公开(公告)号：US07804250B2

公开(公告)日：2010-09-28

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05B6/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080032427A1

公开(公告)日：2008-02-07

申请号：US11751812

申请日：2007-05-22

申请人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

发明人： Yung Hee Lee ,  Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/67253

摘要： An ion analysis system to measure ion energy distribution at several points during a process of manufacturing a semiconductor circuit includes at least two ion flux sensors combined in a single system to measure an ion energy distribution function, each of the ion flux sensors having cells including an opening of 50 micrometers or less.

摘要翻译： 一种用于在制造半导体电路的过程中测量几个点处的离子能量分布的离子分析系统包括组合在单个系统中以测量离子能量分布函数的至少两个离子通量传感器，每个离子通量传感器具有包括 开口为50微米以下。

公开(公告)号：US20100065215A1

公开(公告)日：2010-03-18

申请号：US12585098

申请日：2009-09-03

申请人： Sang Jean Jeon ,  Yuri Tolmachev ,  Vasily Pashkovskiy ,  Kee Soo Park ,  Ju Hyun Lee ,  Su Ho Lee ,  Chan Yun Lee

发明人： Sang Jean Jeon ,  Yuri Tolmachev ,  Vasily Pashkovskiy ,  Kee Soo Park ,  Ju Hyun Lee ,  Su Ho Lee ,  Chan Yun Lee

IPC分类号： C23C16/513 ,  H01L21/3065

CPC分类号： H01J37/32357 ,  H01J37/321

摘要： A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window.

摘要翻译： 一种等离子体发生装置，包括多个等离子体源模块。 每个等离子体源模块包括具有高磁导率的铁氧体磁芯和等离子体可通过的等离子体通道。 等离子体发生装置可以有效地产生并且均匀分布大面积和高密度的等离子体而不需要电介质窗口。

公开(公告)号：US20080314318A1

公开(公告)日：2008-12-25

申请号：US12081221

申请日：2008-04-11

申请人： Kyung Hyun Han ,  Vasily Pashkovskiy ,  Doug Yong Sung ,  Sang Min Jeong ,  Sang Ho Lee

发明人： Kyung Hyun Han ,  Vasily Pashkovskiy ,  Doug Yong Sung ,  Sang Min Jeong ,  Sang Ho Lee

IPC分类号： H05H1/00 ,  H05H1/24

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32165

摘要： Disclosed is a plasma processing apparatus and a method thereof. A plasma processing apparatus includes a chamber for processing a semiconductor substrate by generating plasma, upper and lower electrodes installed in the chamber, a high frequency power supply for supplying high frequency power to the upper and lower electrodes, and a phase controller adjusting a phase difference of the high frequency power supplied to the upper and lower electrodes.

摘要翻译： 公开了一种等离子体处理装置及其方法。 等离子体处理装置包括：通过产生等离子体处理半导体衬底的腔室，安装在腔室中的上下电极，用于向上下电极提供高频电力的高频电源;以及调节相位差的相位控制器 提供给上电极和下电极的高频功率。

公开(公告)号：US20080289576A1

公开(公告)日：2008-11-27

申请号：US12153703

申请日：2008-05-22

申请人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

发明人： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy ,  Andrey Ushakov ,  Gyeong Su Keum ,  Jae Hyun Han ,  Dong Cheol Kim ,  Hyung Chul Cho

IPC分类号： C23C16/44

CPC分类号： H01J37/32449 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32862 ,  H01L21/2236

摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.

摘要翻译： 一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解 激进分子 基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。 基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。