公开(公告)号：US20100065215A1

公开(公告)日：2010-03-18

申请号：US12585098

申请日：2009-09-03

Applicant: Sang Jean Jeon ,  Yuri Tolmachev ,  Vasily Pashkovskiy ,  Kee Soo Park ,  Ju Hyun Lee ,  Su Ho Lee ,  Chan Yun Lee

Inventor： Sang Jean Jeon ,  Yuri Tolmachev ,  Vasily Pashkovskiy ,  Kee Soo Park ,  Ju Hyun Lee ,  Su Ho Lee ,  Chan Yun Lee

IPC: C23C16/513 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  H01J37/321

Abstract: A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window.

Abstract translation: 一种等离子体发生装置，包括多个等离子体源模块。 每个等离子体源模块包括具有高磁导率的铁氧体磁芯和等离子体可通过的等离子体通道。 等离子体发生装置可以有效地产生并且均匀分布大面积和高密度的等离子体而不需要电介质窗口。

公开(公告)号：US20050022934A1

公开(公告)日：2005-02-03

申请号：US10823547

申请日：2004-04-14

Applicant: Tae-yong Kwon ,  Sang-jean Jeon ,  Sang-chul Han ,  Hyung-chul Cho

Inventor： Tae-yong Kwon ,  Sang-jean Jeon ,  Sang-chul Han ,  Hyung-chul Cho

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/32541

Abstract: A plasma etching apparatus having an upper electrode, a lower electrode corresponding to the upper electrode, to place a substrate on, and a high frequency power generator to generate plasma by applying high frequency power to the upper electrode or the lower electrode, wherein a distance between the upper electrode and the lower electrode varies discontinuously on a portion of opposite surfaces of the electrodes by varying the shape of the upper electrode.

Abstract translation: 一种等离子体蚀刻装置，其具有上电极，与上电极对应的下电极，以将基板放置在其上，高频发电机通过向上电极或下电极施加高频电力而产生等离子体， 通过改变上电极的形状，在上电极和下电极之间的电极的相对表面的一部分上不连续地变化。

公开(公告)号：US20120118876A1

公开(公告)日：2012-05-17

申请号：US13289525

申请日：2011-11-04

Applicant: Jung Hyun Cho ,  Yury Tolmachev ,  Sang Jean Jeon ,  Byung Joon Lee ,  Jae Bong Shin ,  Hyungjoon Kim ,  Moon Seok Kim

Inventor： Jung Hyun Cho ,  Yury Tolmachev ,  Sang Jean Jeon ,  Byung Joon Lee ,  Jae Bong Shin ,  Hyungjoon Kim ,  Moon Seok Kim

IPC: H05B6/10

CPC classification number: H05B6/10 ,  H01L24/75 ,  H01L24/81 ,  H05B6/14

Abstract: According to example embodiments, a flip chip bonding apparatus includes a metal chamber, a stage in the metal chamber, and a planar antenna in the chamber. The stage may be configured to receive a circuit board having flip chips arranged thereon. The antenna may be configured to bond the flip chips to the circuit board by inductively heating the flip chips on the circuit board.

Abstract translation: 根据示例性实施例，倒装芯片接合装置包括金属室，金属室中的台和室中的平面天线。 该台可以被配置为接收其上布置有倒装芯片的电路板。 天线可以被配置为通过感应加热电路板上的倒装芯片将倒装芯片连接到电路板。

公开(公告)号：US20080017317A1

公开(公告)日：2008-01-24

申请号：US11735549

申请日：2007-04-16

Applicant: Sang Jean JEON ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

Inventor： Sang Jean JEON ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/507 ,  H01J37/321 ,  H05H1/46

Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract translation: 基板处理装置。 基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频 低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。 该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。

公开(公告)号：US09136094B2

公开(公告)日：2015-09-15

申请号：US14021335

申请日：2013-09-09

Applicant: Jung Hyun Cho ,  Hyung Joon Kim ,  Sang Jean Jeon ,  Sang Heon Lee ,  Jeong Yun Lee ,  Kyung Yub Jeon ,  Vasily Pashkovskiy

Inventor： Jung Hyun Cho ,  Hyung Joon Kim ,  Sang Jean Jeon ,  Sang Heon Lee ,  Jeong Yun Lee ,  Kyung Yub Jeon ,  Vasily Pashkovskiy

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H05H1/24

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H05H1/24

Abstract: A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

Abstract translation: 一种操作等离子体处理装置的方法包括输出具有第一频率和第一占空比的第一RF功率，并输出具有比第一频率高的第二频率的第二RF功率和小于第一占空比的第二占空比 。 第一RF功率的输出和第二RF功率的输出彼此同步。

公开(公告)号：US08404080B2

公开(公告)日：2013-03-26

申请号：US11417043

申请日：2006-05-04

Applicant: Sang-jean Jeon ,  Jong-rok Park ,  Sung-yeup Sa ,  Hee-jeon Yang ,  Guen-suk Lee

Inventor： Sang-jean Jeon ,  Jong-rok Park ,  Sung-yeup Sa ,  Hee-jeon Yang ,  Guen-suk Lee

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/3266

Abstract: An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.

Abstract translation: 处理基板的装置包括处理室，其包括反应空间，其中放置待处理的基板和形成等离子体;铁氧体磁芯，其具有设置在反应空间外侧的多个极和面向反应空间的连接器 多个极并且将多个极彼此连接，围绕多个极的线圈绕组，以及向线圈供电的电力单元。

公开(公告)号：US08343309B2

公开(公告)日：2013-01-01

申请号：US11735549

申请日：2007-04-16

Applicant: Sang Jean Jeon ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

Inventor： Sang Jean Jeon ,  Chin Wook Chung ,  Guen Suk Lee ,  Seung Yuop Sa ,  Hyung Chul Cho

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/507 ,  H01J37/321 ,  H05H1/46

Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract translation: 基板处理装置。 基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频 低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。 该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。

公开(公告)号：US20050087139A1

公开(公告)日：2005-04-28

申请号：US10969928

申请日：2004-10-22

Applicant: Woo-Seok Kim ,  Seung-Ki Chae ,  Do-Young Kam ,  Kwang-Myung Lee ,  Jai-Hyung Won ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Sang-Jean Jeon

Inventor： Woo-Seok Kim ,  Seung-Ki Chae ,  Do-Young Kam ,  Kwang-Myung Lee ,  Jai-Hyung Won ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Sang-Jean Jeon

IPC: H04B1/40 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32192

Abstract: An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.

Abstract translation: 天线包括具有基本相同形状的分支。 分支对称地围绕中心点设置并且沿着其几何中心与中心点重合的至少两个同心图案延伸。 这些分支各自包括完全位于同心图案内的图案形成部分，以及在图案形成部分之间延伸并连接图案形成部分的至少一个连接部分。 在每个分支的端部设置用于允许在分支上施加电压的输入/输出端子。

公开(公告)号：US20140193978A1

公开(公告)日：2014-07-10

申请号：US14021335

申请日：2013-09-09

Applicant: Jung Hyun CHO ,  Hyung Joon KIM ,  Sang Jean JEON ,  Sang Heon LEE ,  Jeong Yun LEE ,  Kyung Yub JEON ,  Vasily PASHKOVSKIY

Inventor： Jung Hyun CHO ,  Hyung Joon KIM ,  Sang Jean JEON ,  Sang Heon LEE ,  Jeong Yun LEE ,  Kyung Yub JEON ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H05H1/24

Abstract: A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

Abstract translation: 一种操作等离子体处理装置的方法包括输出具有第一频率和第一占空比的第一RF功率，并输出具有比第一频率高的第二频率的第二RF功率和小于第一占空比的第二占空比 。 第一RF功率的输出和第二RF功率的输出彼此同步。

公开(公告)号：US08169148B2

公开(公告)日：2012-05-01

申请号：US12149450

申请日：2008-05-01

Applicant: Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

Inventor： Sang Jean Jeon ,  Yuri Tolmachev ,  Su Ho Lee ,  Seoung Hyun Seok ,  Young Min Park ,  Won Hyuk Jang

IPC: H01J7/24

CPC classification number: H01J37/32165 ,  H01J37/321

Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

Abstract translation: 一种等离子体发生装置，其具有使用单个反应室的优异的等离子体产生效率。 等离子体发生装置包括：RF发生器，用于提供RF功率;天线，用于在接收到RF功率时产生电磁场;反应室，用于经由电磁场激发/电离反应气体，产生等离子体;以及等离子体 通道，用于吸收RF功率，并允许电流信号被感应到等离子体。